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It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into three straight line ranges. In high temperature region the rate-controlling mechanism is the diffusion of silicon atoms, but not of silane, which pass through the stagnant layer after thermal decomposition of silane. In intermediate and low temperature region the growth rate-controlling factor is the decomposition rate of silane in the stagnant layer, but not the surface reaction process. Owing to the difference in ratecontrolling mechanism the growth rate has different dependences on the height of stagnant layer. In intermediate and low temperature region the growth rate is proportional to the stagnant layer height, but in high temperature region it is inversely proportional to the square of the stagnant layer height. 相似文献
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本文对高阶奇性常微分方程的非退化边值问题建立了非共轭性存在定理和上、下解型存在定理. 相似文献
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本文是文〔1〕的继续,考虑了具有强奇性的高阶常微分方程的退化多点边值问题,得到了关于C(i1-1)-有界解的存在定理。 相似文献
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通信领域要求更高的频率和更大的功率,从飞机发动机直到宇宙飞船都要求器件在恶劣的条件下工作.这些需求激励着高温半导体的研究,因为它们具有制作抗辐照的大功率、高温、高频及光电子器件的潜力.过去十年内在这一领域取得了很大的进展.本文评述了在半导体金刚石、碳化硅和氮化物的研究方面的进展与存在的问题. 相似文献
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