Fe-N软磁薄膜的结构和性能

用RF溅射制备厚度为200 nm的Fe-N薄膜在250℃, 12000 A/m磁场下真空热处理后，当N含量在5%～7%(原子百分数)范围内形成α′+α″相时，4πM_S可达2.4 T, H_c＜80 A/m, 2～10 MHz下高频相对导磁率μ_r=1500，可满足针对10 Gb/in2存储密度的GMR/感应式复合读写磁头中写入磁头的需要. Fe-N系薄膜中α′相的形成机理和点阵常数与块状试样按Bain机理形成的α′相有明显的差别，得到了薄膜中α′相的a,c与Cα′_N之间的线性关系式.     

C3N4硬膜的人工合成和鉴定 *

用微波等离子体化学气相沉积法 (MPCVD)在硅和铂衬底上得到高质量的C₃N₄薄膜 .计算了α-C₃N₄和β-C₃N₄单相X射线谱的峰位和强度 ,沉积膜的X射线谱具有两相的所有强峰 ,证明它是α- 和β- C₃N₄的混合物 .总的N/C比在1.0～2.0之间 .FT-IR和Raman谱支持C—N共价键的存在 .体积弹性模量达到349GPa .对薄膜特性的鉴定提出了一些看法.     

应用正电子湮没技术研究多晶形变镍中氢和缺陷的互作用

本文采用正电子湮没的多普勒展宽方法,研究冷轧形变镍中阴极充氢后氢与缺陷的互作用行为。实验结果表明:冷轧镍电解充氢以后其S参数显著上升,S参数上升量的大小取决于试样内部的空位浓度,与位错密度的大小关系不大。由此提出氢与空位互作用形成以氢为核心的空位团的机制,解释了实验中观察到的现象。     

The structure and magnetic properties of Fe- N thin films

200 nm Fe-N thin films deposited on glass substrates by RF sputtering were vacuum annealed at 250-350℃ under 12000 A/m magnetic field. Heat treatment was effective in improving the soft magnetic properties of the Fe-N film. When the nitrogen content was in the range of 5-7 at. %,the thin films consisted of α′ + α" after heat treatment and had excellent soft magnetic properties of 4πMs = 2.4 T, Hc ＜ 80 A/m, μr = 1500 under 2-10 MHz. The properties of the films meet the needs of a write head material used in the dual element GMR/inductive heads. The fromation mechanism and lattice constants of the α′ phase in Fe-N thin film are different from Jack's results obtained from γ→α′transformation in bulk samples. The linear relationship between a, c and Ca'N for thin film was obtained asc = 2. 866+ 1.559Ca'N,a = 2.866 + 0.181Ca'N.``     

不同速度拉伸变形时高纯铁的正电子湮没研究

本文采用慢拉伸与正电子多普勒展宽方法相结合,研究应变速率对正电子S参数与形变量ε变化规律(S-ε曲线)的影响,获得如下结果:1)高纯铁慢拉伸条件下,其S-ε曲线出现不饱和现象,应变速率越小,不饱和现象越明显;2)高纯铁中S-ε曲线随应变速率变化的原因归结于不同应变速率拉伸所产生的位错组态不同;3)高纯铁拉伸变形时,S参数的增加一部份来源于位错,另一部份来源于空位,空位及其聚合物是导致S-ε曲线不饱和的主要原因。 关键词：     

钕和镧对氢在铁中渗透过程的影响

用电化学方法研究了钕和镧对工业纯铁中氢的渗透过程和扩散系数的影响。随着铁中钕或镧含量的增加,氢的渗透过程减慢、扩散系数下降。固溶钕和镧原子是铁中氢的可逆浅陷阱。固溶钕原子与氢的结合能为4.4kcal/mol。当钕含量<0.082wt％时,氢的扩散过程激活能为6.1kcal/mol,含钕的铁中氢的渗透过程激活能为8.7kcal/mol。     

CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of α-C₃N₄ and β-C₃N₄, but most of the peaks are overlapped.The films are composed of α-C₃N₄ and β-C₃N₄. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in α- and β-C₃N₄ mixture.     

Fe-Ti-N薄膜的结构和性能研究

Fe-Ti-N薄膜在高溅射功率900W下用RF磁控溅射方法制备,膜厚为630～780nm.当氮含量在Fe-Ti(3.9at.;)-N(8.8at.;) 和 Fe-Ti(3.3at.;)-N(13.5at.;)范围内,薄膜由α′和Ti2N沉淀组成,4πMs超过纯铁,最高可达2.38T;而 Hc下降为89A/m,可以满足针对10Gb/in2高存储密度的GMR/感应式复合读写磁头中写入磁头的需要.     

用MPCVD法制备氮化碳薄膜

用微波等离子体化学气相沉积法(MPCVD)在硅片和铂基片上生长了氮化碳薄膜.扫描电镜(SEM)观察显示,在硅片上形成了多晶的膜;EDX能谱分析表明膜中的碳氮比在1.0～2.0之间;X射线衍射谱表明在硅片和铂片上生长的氮化碳薄膜是由α-C3N4和β-C3N4晶相组成的;XPS峰形分析表明,薄膜中的C、N主要是以共价单键结合的;红外谱中也出现了β-C3N4的特征谱线.因此有足够的证据表明,晶态的氮化碳薄膜已经合成.