Fe-N软磁薄膜的结构和性能

用RF溅射制备厚度为200 nm的Fe-N薄膜在250℃, 12000 A/m磁场下真空热处理后，当N含量在5%～7%(原子百分数)范围内形成α′+α″相时，4πM_S可达2.4 T, H_c＜80 A/m, 2～10 MHz下高频相对导磁率μ_r=1500，可满足针对10 Gb/in2存储密度的GMR/感应式复合读写磁头中写入磁头的需要. Fe-N系薄膜中α′相的形成机理和点阵常数与块状试样按Bain机理形成的α′相有明显的差别，得到了薄膜中α′相的a,c与Cα′_N之间的线性关系式.     

The structure and magnetic properties of Fe- N thin films

200 nm Fe-N thin films deposited on glass substrates by RF sputtering were vacuum annealed at 250-350℃ under 12000 A/m magnetic field. Heat treatment was effective in improving the soft magnetic properties of the Fe-N film. When the nitrogen content was in the range of 5-7 at. %,the thin films consisted of α′ + α" after heat treatment and had excellent soft magnetic properties of 4πMs = 2.4 T, Hc ＜ 80 A/m, μr = 1500 under 2-10 MHz. The properties of the films meet the needs of a write head material used in the dual element GMR/inductive heads. The fromation mechanism and lattice constants of the α′ phase in Fe-N thin film are different from Jack's results obtained from γ→α′transformation in bulk samples. The linear relationship between a, c and Ca'N for thin film was obtained asc = 2. 866+ 1.559Ca'N,a = 2.866 + 0.181Ca'N.``