新型功能碳材料的高压截获

高性能功能材料在诸多领域具有广泛的应用前景,是人们一直关注的研究热点。高压可以有效地改变物质的原子间距和成键方式,是获得新型功能材料的重要途径。在碳材料的高压研究中,许多有趣的功能碳材料,如光学透明碳、高强度弹性碳和超硬非晶碳等,已经通过不同的碳前驱体合成。本文简要介绍了作者近年来在低维碳基纳米复合材料高压研究中取得的进展,基于设计的不同低维碳前驱体,高压下截获了具有超硬特性、新型压致共价聚合及发光增强的碳材料。     

拓扑空间(组)的同伦等价变换及有序介质状态的拓扑分类

凝聚态和相变物理的一个重要部分是研究有序相的状态和缺陷,近二十年来,应用代数拓扑学方法对有序介质的状态和缺陷进行分类,增进了人们对相变等过程的认识,从而引起广泛的注意,虽然从本质上说,缺陷拓扑分类也可纳入状态拓扑分类的框架,国际上迄今的有关研究却主要针对缺陷;除织构(孤子)态外,对一般状态甚少涉及,本文试图     

δ-点阵函数的Fourier变换及其对衍射理论的应用

用广义函数理论对δ-点阵函数的Fourier变换公式(?)δ(r-R)=(1/V_0)(?)(h-H)做了进一步的证明,指出了它与Fourier级数展开的关系;结合实例说明了应用此公式后衍射几何的理论体系能得到显著的简化;还根据这个公式纠正了几例在文献中常出现的错误。     

固固相反应合成牛磺酸水杨醛钾与锑、铋的配合物

合成了牛磺酸水杨醛钾,并采用室温固固相反应法合成了牛磺酸水杨醛钾与三氯化锑和三氯化铋的配合物,其组成为:K2MC18H20O8N2S2 (M = Sb, Bi)。两种配合物的晶体结构均属于单斜晶系,锑配合物的晶胞参数为:a = 1.2869 nm, b = 1.7636 nm, c = 1.9917 nm, β= 93.79埃活榕浜衔锏木О问篴 = 1.4770 nm, b = 2.0334 nm, c = 2.0149 nm, β= 94.05。红外光谱表明N、Cl原子参与了配位,中心离子的配位数为5。     

固固反应合成三碘化锑、三碘化铋与硫脲配合物

通过三碘化锑和三碘化铋与硫脲间的室温固固反应合成了三碘化锑、三碘化铋的硫脲配合物 ,其组成为 :M[CS( NH2 ) 2 ]3 I3 ( M=Sb,Bi)。两种配合物的晶体结构均属于单斜晶系 ,锑配合物 Sb[CS( NH2 ) 2 ]3 I3 的晶胞参数为 :a=1 .4 772 nm,b=1 .6 5 82 nm,c=2 .0 6 74 nm,β=90 .81°,铋配合物 Bi[CS( NH2 ) 2 ]3 I3 的晶胞参数为 :a=1 .4 0 1 0 nm,b=2 .0 1 6 8nm,c=2 .0 397nm,β=90 .84°。远红外光谱表明硫脲中的 N原子而非硫原子参与了配位     

洋葱中多种农药残留的双柱双检测器气相色谱分析法

洋葱中含有许多对人类有用的成分包括:水分、蛋白、脂肪、膳食纤维、碳水化合物、胡萝卜素、视黄醇、硫胺素、核黄素、抗坏血酸、维生素总E、K、Na、Ca、Mg、Fe、Mn、Zn等[1].近来的许多研究表明,洋葱具有消炎抑菌,预防心血管疾病、糖尿病等生物活性[2].由于洋葱的医疗价值和保健作用,洋葱现在已经成为人们喜爱的蔬菜,受到人们的重视,尤其在欧美,洋葱被称为"蔬菜皇后".目前,国内外对洋葱的研究越来越多,但是主要集中在研究它的生物活性和成分上[2-4].由于洋葱中合有油类物质,因此给农药残留分析带来许多困难.至今,对洋葱中的农药残留分析还未有成熟的方法.目前,用气相色谱分析多组分农药残留的报道已经有了很多[5,6],关于用双检测器分析多组分农药残留的研究,已越来越引起研究人员的关注[7-9].Jatiender Kumar Dubey等[7]用GC-NPD和GC-ECD检测了食品中乙烯基硫脲的含量.Jiménez等[8]利用GC-NPD和GC-ECD分析了蜂蜜中的农药残留.但是用GC-FPD和GC-ECD分析洋葱中的农药残留还未见报道.本文报道了一种简便、快速的洋葱中多种有机磷和菊酯类农药残留的提取净化及其双柱双检测器测定方法.采用乙睛提取洋葱中的农药,二氯甲烷/乙酸乙酯(20:1,V:V)为淋洗剂,经过Florisil和活性炭净化后,用气相色谱-火焰光度检测器和气相色谱-电子捕获检测器分别直接测定各种农药残留含量.结果表明,采用程序升温,所测定的有机磷和菊酯类农药在DB-1701和BPX608弹性石英毛细管柱上得到了很好的分离,且方法快速、灵敏,完全符合实际应用需要.各种农药的加标回收率范围为86.3～103%,变异系数范围为0.67～4.6%,最低检测浓度范围为0.001～0.005 mg/kg.     

电子亲合能与原子的Z */r及电子构型的关系

从电子亲合能定义出发，讨论了原子在形成相应负离子时，新增电子所受吸引能（Ｚ／ｒ）与电子亲合能的关系。从计算所得１～８６号元素各原子Ｚ／ｒ值显示，Ｚ／ｒ和ＥＡ值均体现出一定的周期性变化规律。对某些反常现象也从各自的电子构型角度给以解释。     

INTERLAYER EXCHANGE COUPLING IN COMPLEX MAGNETIC MULTILAYERS

We extend the hole confinement model of Edwards et al. to the problem of two kinds of complex magnetic sandwich structures. One is the magnetic sandwich covered on both sides by nonmagnetic films(case 1) and the other is that covered by magnetic films(case 2). The interlayer exchange coupling and the angular dependence of coupling energy in the two cases are investigated systematically. For case 1, our results show that the magnetic and outer nonmagnetic films influence significantly the oscillation behavior of exchange coupling and the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers. Our results also show that the nonoscillatory component of the coupling generally varies with the thickness of magnetic(outer nonmagnetic) films and the results in the case where the thickness of both magnetic(outer nonmagnetic) films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic(outer nonmagnetic) films is fixed while the other is varied, which is qualitatively in agreement with the experimental measurements. For case 2, the exponential dependence of exchange coupling on the thickness of the intermagnetic layer has been obtained, similar to the Parkin's experimental results for giant magnetoresistance.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.