Flower-like titanium dioxide as novel co-reaction accelerator for ultrasensitive “off–on” electrochemiluminescence aptasensor construction based on 2D g-C3N4 layer for thrombin detection

Journal of Solid State Electrochemistry - An ultrasensitive “signal-off–on” electrochemiluminescence (ECL) biosensor is constructed based on f1-TiO2/g-C3N4/PDA for thrombin...     

A control-theoretic perspective on optimal high-order optimization

Mathematical Programming - We provide a control-theoretic perspective on optimal tensor algorithms for minimizing a convex function in a finite-dimensional Euclidean space. Given a function...     

The Coordination Chemistry of f-Block Elements in Molten Salts

The coordination chemistry of f-block elements (lanthanide and actinide) in molten salts has become a resounding topic in view of its great importance to the research and development (R&D) of molten salt reactors and pyroprocessing. In this Review article, a general overview of the coordination chemistry of f-block elements in molten salts is provided including past achievements and recent advances. Particular emphases are placed on the oxidation state, speciation, and solution structure of f-block metal ions in molten salts, as well as their relationships with the salt composition. Furthermore, this review briefly discusses the spectroscopic and theoretical methods that complement each other in revealing the coordination properties.     

大尺寸电阻加热式碳化硅晶体生长热场设计与优化

大尺寸低缺陷碳化硅(SiC)单晶体是功率器件和射频(RF)器件的重要基础材料,物理气相传输(physical vapor transport, PVT)法是目前生长大尺寸SiC单晶体的主要方法。获得大尺寸高品质晶体的核心是通过调节组分、温度、压力实现气相组分在晶体生长界面均匀定向结晶,同时尽可能减小晶体的热应力。本文对电阻加热式8英寸(1英寸=2.54 cm)碳化硅大尺寸晶体生长系统展开热场设计研究。首先建立描述碳化硅原料受热分解热质输运及其多孔结构演变、系统热输运的物理和数学模型,进而使用数值模拟方法研究加热器位置、加热器功率和辐射孔径对温度分布的影响及其规律,并优化热场结构。数值模拟结果显示,通过优化散热孔形状、保温棉的结构等设计参数,电阻加热式大尺寸晶体生长系统在晶锭厚度变化、多孔介质原料消耗的情况下均能达到较低的晶体横向温度梯度和较高的纵向温度梯度。     

Special John-Nirenberg-Campanato spaces via congruent cubes

Let p ∈ [1, ∞), q ∈ [1, ∞), α∈ R, and s be a non-negative integer. Inspired by the space JNp introduced by John and Nirenberg(1961) and the space B introduced by Bourgain et al.(2015), we introduce a special John-Nirenberg-Campanato space JN^con_(p,q,s) over Rⁿ or a given cube of R;with finite side length via congruent subcubes, which are of some amalgam features. The limit space of such spaces as p →∞ is just the Campanato space which coincides with the space BMO(the space of functions with bounded mean oscillations)when α = 0. Moreover, a vanishing subspace of this new space is introduced, and its equivalent characterization is established as well, which is a counterpart of the known characterization for the classical space VMO(the space of functions with vanishing mean oscillations) over Rⁿ or a given cube of Rⁿ with finite side length.Furthermore, some VMO-H¹-BMO-type results for this new space are also obtained, which are based on the aforementioned vanishing subspaces and the Hardy-type space defined via congruent cubes in this article. The geometrical properties of both the Euclidean space via its dyadic system and congruent cubes play a key role in the proofs of all these results.     

Investigation of Thermal Gradient Mechanical Fatigue Test Methods for Nickel-based Superalloys

Experimental Mechanics - Temperature gradients significantly affect the material fatigue process. A reliable and robust test procedure is needed for quantifying the effects of temperature gradients...     

A visual uncertainty analytics approach for weather forecast similarity measurement based on fuzzy clustering

Journal of Visualization - Forecast calibration methods based on historical similar atmospheric state are effective means weather forecast accuracy. Conventional approaches search similar forecasts...     

A New Quassinoid from Brucea javanica

Chemistry of Natural Compounds - A new quassinoid, dehydrobruceantinol B (1), was isolated from the seeds of Brucea javanica, together with two known compounds, bruceantinol (2) and bruceine A (3)....     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。