Experimental Investigation of the Electromagnetically Induced-Absorption-Like Effect for an N-Type Energy Level in a Rubidium BEC

We study the electromagnetically induced-absorption-like(EIA-like) effect for an n-type system in an ~(87)Rb Bose–Einstein condensate(BEC) using the absorption imaging technique for coupling and driving lasers operating at the D_1 and D_2 lines of ~(87)Rb. The coherent effect is probed by measuring the number of atoms remaining after the BEC is exposed to strong driving fields and a weak probe field. The absorption imaging technique accurately reveals the EIA-like effect of the n-type system. This coherent effect in an n-type system is useful for optical storage, tunable optical switching, and so on.     

~(87)Rb玻色-爱因斯坦凝聚体的快速实验制备

采用二维磁光阱产生了-个快速~(87)Rb原子流,并在高真空的三维磁光阱中实现了~(87)Rb原子的快速俘获,进一步采用射频蒸发冷却技术实现了原子云的预冷却,然后将原子转移到远失谐的光学偶极阱中蒸发得到了玻色-爱因斯坦凝聚体.实验上可以在25 s内完成三维磁光阱的装载(约1.0×10~(10)个~(87)Rb原子),然后经过16 s的冷却过程最终在光学偶极阱中获得5.0×10~5个原子的玻色-爱因斯坦凝聚体.实验重点研究了二维磁光阱的优化设计和采用蓝失谐大功率光束对四极磁阱零点的堵塞,抑制四极磁阱中原子的马约拉纳损耗,更加有效地对原子云进行预冷却.     

Achieving ultracold Bose-Fermi mixture of 87Rb and 40K with dual dark magnetic-optical-trap

We demonstrate that dual dark magnetic-optical-traps (MOTs) have great importance in the two-species ⁸⁷Rb and ⁴⁰K mixture compared with dual bright MOTs. The dark MOT has a little improvement in the trapping of single-species ⁸⁷Rb or ⁴⁰K gases compared with bright MOT. For the case of loading two-species ⁸⁷Rb and ⁴⁰K simultaneously, the improvement of ⁴⁰K in the dual dark MOTs is mainly from the reduction of light-assisted collision losses. The dual dark MOTs employ a pair of conical lenses to produce the hollow beam for repump laser with high efficiency. The number and density of ⁸⁷Rb and ⁴⁰K atoms after evaporative cooling in the hybrid magnetic trap with dark MOT loading are compared with those in bright MOT. The atoms with large number and high density make it easier to realize the quantum degenerate of Bose-Fermi mixture.     

Synergistic influences of titanium,boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B₂O₃ in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B₂O₃ without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.     

硼协同掺杂金刚石单晶的高温高压合成

金刚石是一种具有优异性能的极限性超硬多功能材料。人工合成的金刚石可通过掺杂的方式使其具有各种独特的性质。掺硼金刚石兼具p型半导体的导电特性和金刚石自身优良的物理和化学性能,在国防、医疗、勘探、科研等领域具有极高的应用价值。本文基于本课题组高温高压(HPHT)法合成的系列掺硼金刚石以及硼协同掺杂金刚石单晶,进行了硼掺杂金刚石、硼氢协同掺杂金刚石以及硼氮协同掺杂金刚石的合成和性能特征等方面的研究。通过表征合成样品在光学、电学方面的性能,探讨了不同掺杂添加剂对合成金刚石性能的影响,为合成高性能的半导体金刚石提供了思路。     

高温高压下氮氢协同掺杂对{100}晶面生长宝石级金刚石的影响

在压力为5.5–6.2 GPa, 温度为1280–1450 ℃的条件下, 利用温度梯度法详细考察了氮氢协同掺杂对100晶面生长宝石级金刚石的影响. 实验结果表明伴随合成腔体内氮、氢浓度的升高, 合成条件明显升高, 金刚石生长V形区间上移; 晶体的红外光谱中与氮相关的吸收峰急剧增强, 氮含量可达2000 ppm, 同时位于2850 cm^-1和2920 cm^-1对应于 sp³杂化 C–H 键的对称伸缩振动和反对称伸缩振动的红外特征峰逐渐增强, 表明晶体中既有高的氮含量, 同时又含有氢. 对晶体进行电镜扫描发现, 氮氢协同掺杂对晶体形貌影响明显, 出现拉长的{111}面, 且晶体表面上有三角形生长纹理. 拉曼测试表明, 晶体的峰位向高频偏移、半峰宽变大, 说明氮、氢杂质的进入对晶体内部产生了应力. 本文成功地以{100}晶面为生长面合成出高氮含氢宝石级金刚石单晶, 在探究氮氢共存环境下金刚石生长特性的同时, 也可为理解天然金刚石的形成机理提供帮助.     

Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm²·V^-1·s^-1, possible reasons were discussed in the paper.     

光学相位锁定激光在原子玻色-爱因斯坦凝聚中实现拉曼耦合

采用光学相位锁定环路技术将外腔反馈式半导体激光器锁定到与钛宝石激光器输出激光频率上. 锁定后两束激光的差频线宽从MHz降低到Hz量级, 同时两束激光的频率差可实现几百兆赫兹到7 GHz的精密调节. 锁定的两束激光作用在铷原子玻色-爱因斯坦凝聚的两个基态超精细态F=2, 1, 观测到在两个超精细态之间的拉曼跃迁. 该技术可用于超冷原子两个超精细态之间自旋轨道耦合.     

Properties of B_4C-TiB_2 ceramics prepared by spark plasma sintering

By doping titanium hydride(TiH2) into boron carbide(B4C), a series of B4C + x wt% TiH2(x = 0, 5, 10, 15, and 20)composite ceramics were obtained through spark plasma sintering(SPS). The effects of the sintering temperature and the amount of TiH2 additive on the microstructure, mechanical and electrical properties of the sintered B4C-TiB2 composite ceramics were investigated. Powder mixtures of B4C with 0–20 wt% TiH2 were heated from 1400℃ to 1800℃ for 20 min under 50 MPa. The results indicated that higher sintering temperatures contributed to greater ceramic density. With increasing TiH2 content, titanium diboride(TiB2) formed between the TiH2 and B4C matrix. This effectively improved Young’s modulus and fracture toughness of the composite ceramics, significantly improving their electrical properties: the electrical conductivity reached 114.9 S·cm-1 at 1800℃ when x = 20. Optimum mechanical properties were obtained for the B4C ceramics sintered with 20 wt% TiH2, which had a relative density of 99.9±0.1%, Vickers hardness of 31.8 GPa,and fracture toughness of 8.5 MPa·m1/2. The results indicated that the doping of fine Ti particles into the B4C matrix increased the conductivity and the fracture toughness of B4C.     

Effect of the codoping of N—H—O on the growth characteristics and defects of diamonds under high temperature and high pressure

Diamond crystals were synthesized with different doping proportions of N—H—O at 5.5 GPa—7.1 GPa and 1370 °C—1450 °C. With the increase in the N—H—O doping ratio, the crystal growth rate decreased, the temperature and pressure conditions required for diamond nucleation became increasingly stringent, and the diamond crystallization process was affected. [111] became the dominant plane of diamonds; surface morphology became block-like; and growth texture, stacking faults, and etch pits increased. The diamond crystals had a two-dimensional growth habit. Increasing the doping concentration also increased the amount of N that entered the diamond crystals as confirmed via Fourier transform infrared spectroscopy. However, crystal quality gradually deteriorated as verified by the red-shifting of Raman peak positions and the widening of the Raman full width at half maximum. With the increase in the doping ratio, the photoluminescence property of the diamond crystals also drastically changed. The intensity of the N vacancy center of the diamond crystals changed, and several Ni-related defect centers, such as the NE1 and NE3 centers, appeared. Diamond synthesis in N—H—O-bearing fluid provides important information for deepening our understanding of the growth characteristics of diamonds in complex systems and the formation mechanism of natural diamonds, which are almost always N-rich and full of various defect centers. Meanwhile, this study proved that the type of defect centers in diamond crystals could be regulated by controlling the N—H—O impurity contents of the synthesis system.