Ba(Zn(1-x)/3Nix/3Nb2/3)O3微波介质陶瓷的微观结构

本文采用传统的固相陶瓷烧结工艺,利用Ni2+取代Ba(Zn1/3Nb2/3)O3 的B位Zn2+形成固溶体来研究其微观结构.XRD表明,系统的主晶相为立方钙钛矿的BZNN,并有少量第二相如Ba5Nb4O15、BaNb2O6等存在.随Ni2+含量增加,系统晶格常数a减小;而随烧结温度升高,a逐渐增大.系统在1500 ℃下烧结时为固相烧结;当烧结温度为1550 ℃时,系统由固相烧结转变为液相烧结.较低温度下烧结时,在低角度区有很微弱的1∶ 2有序相产生;烧结温度升高,无序相增加,有序相消失.     

Numerical simulation of super-short pulsed discharge in Helium with particle-in-cell Monte--Carlo collisions technique

This paper reports that a simulation of glow discharge in pure helium gas at the pressure of 1.333×10³ Pa under a high-voltage nanosecond pulse is performed by using a one-dimensional particle-in-cell Monte Carlo collisions (PIC--MCC) model. Numerical modelling results show that the cathode sheath is much thicker than that of anode during the pulse discharge, and that there exists the phenomenon of field reversal at relative high pressures near the end of the pulse, which results from the cumulative positive charges due to their finite mobility during the cathode sheath expansion. Moreover, electron energy distribution function (EEDF) and ion energy distribution function (IEDF) have been also observed. In the early stage of the pulse, a large amount of electrons can be accelerated above the ionization threshold energy. However, in the second half of the pulse, as the field in bulk plasma decreases and thereafter the reverse field forms due to the excessive charges in cathode sheath, although the plasma density grows, the high energy part of EEDF decreases. It concludes that the large volume non-equilibrium plasmas can be obtained with high-voltage nanosecond pulse discharges.     

B位四价Sn4+, Zr4+取代对Ba(Zn1/3Nb2/3)O3系统微观结构的影响

采用传统的固相陶瓷烧结工艺,利用四价正离子Sn4+、Zr4+取代Ba(Zn1/3Nb2/3)O3陶瓷的B位Zn2+、Nb5+,研究其对Ba(Zn1/3Nb2/3)O3系统微观结构的影响.四价Sn4+、Zr4+取代B位Zn2+、Nb5+可以形成固溶体,系统的主晶相仍为立方相.系统晶格常数a随着Sn4+取代量的增加而呈线性增大,相同Sn4+取代量下随着烧结温度的增加,晶格常数a增大.BaZrO3(BZ)的加入可减少第二相的生成.Sn4+、Zr4+均可改善系统烧结特性,加快致密化形成.     

普通话与台湾国语声调的对比分析

本文对普通话和台湾国语的单字调和语句中声调的音高、音长进行了研究．结果表明,由于受到闽南话的影响台湾国语阴平和阳平在音高表现上和相应的普通话音节有所不同;普通话上声是“曲折调”,其后半段的调型特征为“微升”,台湾国语上声是“低降调”;单念时普通话声调的时长为,上>阳>阴>去,台湾国语则为,阴>阳>上>去。二者在语句中声调的差异主要表现为:普通话阳平是“中升调”,而台湾国语阳平是“中平调”;韵律短语边界效应在台湾国语中的作用力更大;受边界效应影响时,普通话各声调音节的时长延长基本上是相同的,而台湾国语中阴平和阳平延长的程度显著大于上声和去声;时长统计结果表明,语句中普通话上声长于去声,短于阴平和阳平,而台湾国语上声则是四个声调中最短的。     

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

Fabrication of Mn-Doped GaN Nanobars

We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000oC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift （409 nm） are comparable to pure GaN（370 nm） at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.     

快速诊断疟疾的免疫层析试条的研制

开发成功了一种能快速、灵敏、高特异性检测疟疾的免疫层析试条。选自恶性疟原虫富组蛋白Ⅱ－一级结构中的九肽（ＡＨＨＡＨＨＡＡＤ），经人工合成后作为免疫原，生产了一些单表位单抗；完成了一些单抗的纯化与鉴定；制取了金标单抗并对其吸收光谱进行了分析；选取了包被单抗和金标单抗间的配对；比较了影响检测的各种因子。当用此试条检测６２名已用常规血间检法确证患有疟疾个体的全血，准确率达９３．５４％。