<Superscript>63</Superscript>Ni schottky barrier nuclear battery of 4H-SiC

The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm² to collect the charge from a 4 mCi/cm^{2 63}Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the ⁶³Ni source with an activity of 0.12 mCi. An open circuit voltage (V _OC) of 0.27 V and a short circuit current density (J _SC) of 25.57 nA/cm² are measured. The maximum output power density (P _max) of 4.08 nW/cm² and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p–n or p–i–n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics.     

一种在线测量微机械薄膜残余应力的新结构

提出了一种利用临界屈曲法在线测量微机械薄膜残余应力的新结构，并采用表面微加工技术制作了两种测试样品.搭建了在线观测实验装置来实时监控释放过程中结构出现的临界屈曲变形模态，由此判断出结构内部的应力状态，同时在测得临界刻蚀深度的情况下，采用有限元方法计算出残余应力大小.借助有限元方法，先研究了多个参数对临界屈曲应力的影响，然后利用这种新结构对薄膜残余应力进行了实际测量，所得结果与微旋转结构的应力测量结果基本吻合.分析及实验表明，新结构在测量薄膜残余应力方面有许多优点，具有较高的实用价值，不仅能满足大量程的应力检测要求，而且只用一个结构就可以同时测量压应力和拉应力，从而极大提高了器件版图空间的利用率.     

Tetrakis- and tris(1-Methyluracil) complexes of Pt(II): formation and properties of a carbon-bonded nucleobase species as well as of heternonuclear derivatives

The reaction of K2PtCl4 with an excess of 1-methyluracilate (1-MeU) in water at 60 degrees C leads to the formation of two major products, K2[Pt(1-MeU-N3)4].10H2O (1) and trans-K[Pt(1-MeU-N3)2(1-MeU-C5)(H2O)].3H2O (2). Addition of CuCl2 to an aqueous solution of 2 yields the mixed-metal complex trans-[PtCl(1-MeU-N3,O4)2(1-MeU-C5,O4)Cu(H2O)].H2O (4). Single-crystal X-ray analysis was carried out for 1 and 4. In both compounds, the heterometals (K+ in 1 and Cu2+ in 4) are bonded to exocyclic oxygens atoms of the 1-MeU ligands, giving rise to intermetallic distances of 3.386(2) and 3.528(2) A in 1 and 2.458(1) A in 4. The shortness of the Pt-Cu separation in 4 is consistent with a dative bond between PtII and CuII. The aqua ligand in 2 is readily substituted by a series of other ligands (e.g., 1-MeC, 9-MeGH, and CN-), as demonstrated by 1H NMR spectroscopy, with 3J(195Pt-1H(6)) coupling constants being sensitive indicators. Acid-base equilibria of 1 and 2 have been studied in detail and reveal some unexpected features: 1 has a relatively high basicity, with protonation starting below pH 5, and first and second pKa values being ca. 3.4 and 0.4, respectively. These pKa values are markedly higher than those of related neutral 2:1 or cationic 1:1 complexes and are attributed to both charge effects (-2 charge of 1) and a favorable stabilization of oxygen-protonated species by the arrangement of four exocyclic oxygen groups of 1-MeU ligands at either sides of the platinum coordination planes. Whereas in 2, H+ affinities of the three uracil ligands are in the normal range, there is a surprisingly low acidity of N(3)H of the C5-bonded uracil with a pKa of approximately 12.2, which compares with 9.75 for free 1-methyluracil. This implies that the C5-bonded PtII does not induce the typical acidifying effect of a PtII metal entity when bonded to a ring nitrogen atom of a neutral nucleobase. Rather, the effect is qualitatively similar to that of a metal ion bonded to N3 of an anionic 1-MeU ligand, which likewise increases its overall basicity as compared to neutral 1-MeUH.     

THF-FER沸石的系列研究—Ⅱ．模板剂分子THF的位置

用^13C HPDEC MAS NMR与热分析方法表征了在四氢呋喃（THF）-Na2O-SiO2- Al2O3-H2O体系中水热合成的高硅Na-THF-FER沸石、酸交换后的H-THF-FER沸石以及 吸附于Na-FER和H-FER沸石中的THF。结果证明，模板剂分子THF位于Na-THF-FER沸 石骨架的FER笼内，平衡骨架阳离子Na^+主要存在于十元环孔道；而吸附子FER沸石 中的THF仅处于十元环孔道中，合成样品中THF的化学位移与液态THF相比，向低场 移动，谱线明显变宽，表明THF分子与FER笼之间存在很强的相互作用。     

Mg助剂对Co/Mg/HZSM-5催化剂结构及其催化甲烷部分氧化制合成气性能的影响

采用XRD、TEM、H2-TPR、Raman、XPS和活性评价等方法, 研究了Mg助剂对Co/Mg/HZSM-5催化剂物理化学性质和甲烷部分氧化(POM)制合成气反应性能的影响. 研究发现, 在Co/HZSM-5催化剂中添加Mg助剂, 可有效地提高催化剂的催化活性和稳定性. 在750 ℃和空速1.0×10⁵ mL·h^-1·g^-1反应条件下, Co/Mg/HZSM-5在连续反应30 h的实验时间内催化活性稳定不变, 而Co/HZSM-5因其活性中心Co0转化生成CoAl2O4非活性相, 反应10 h后即迅速失活. 催化剂表征结果表明, 在Co/Mg/HZSM-5催化剂中钴物种除以Co3O4存在外, 一部分钴物种还与Mg助剂发生强相互作用生成较难还原的MgCo2O4, 由此导致还原后钴金属的分散度较高. 关联催化剂表征和活性评价结果, 讨论了催化剂结构与性能之间的关系.     

2003年全国检测声学学术会议在上海召开

由中国声学学会检测声学分会、上海市声学学会、同济大学声学研究所联合主办的2003年全国检测声学学术会议于2003年11月10日-12日在上海同济大学召开。来自中科院声学所、北大电子系、南大声学所及同济声学所等单位的45名全国各地声学工作者出席会议。中国声学学会、上海市声学学会及《声学技术》编辑部分别派员出席。三天的会议中,有36篇报告在会上宣读。论文涉及粘结强度质量检测、超声成像、超声在能源、铁道领域的应用、激光超     

THF—FER沸石的系列研究—1．晶体结构稳定性

四氢呋喃（THF）-Na2O-SiO2-Al2O3-H2O体系水热合成的THF-FER沸石，经酸交 换-焙烧脱THF（Ⅰ）或焙烧脱THF-酸交换（Ⅱ）的不同方式处理，均可制得低钠H- FER沸石。经XRD，^27Al与^29Si MAS NMR,低温氮吸附等表征证明，通过1273K高温 的热处理和1073K饱和水蒸气下的水热处理，H-FER沸石骨架保持高度稳定。在高温 水蒸气作用下，Si(2Al）容易从骨架上脱离，而Si(1Al）则保持相对稳定，以（Ⅱ ）方法处理，制备的H-FER沸石在水热条件下易产生较多的硅差劲基缺陷。经高温 热和水热处理后，H-FER沸石孔道结构基本保持完美、开放。     

多嵌段聚醚氨酯脲为基质的新型高分子固态离子导体

本文合成了一系列聚乙二醇型多嵌段聚醚氨酯脲，而且用这类聚醚氨酯甩与高氯酸锂制得了一种新型的高分子固态离子导体复合物。在室温和50℃之间，其电导率比聚环氧乙烷为基质的固体电解质的高一到二个数量级，它还具有优良的综合性能。因此，对于室温薄膜蓄电池来说，这种新型的固体电解质是一类良好的候选材料。     

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.     

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.