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基于氧化限制型内腔接触垂直腔面发射激光器(VCSEL) 结构设计, 研究了VCSEL的多横模分布及其模式波长分裂特性与氧化孔径尺寸、形状的关系. 在实验基础上, 通过建立有效折射率模型, 并利用标量亥姆霍兹方程的迭代算法理论, 分别对椭圆形氧化孔径和圆形氧化孔径VCSEL的横向模式特性进行模拟研究, 计算得到不同形状孔径的多横模光场分布情况, 同时测量得到高阶横模多频输出光谱. 研究发现, 椭圆氧化孔形状不仅影响横模分布特性, 还会导致每个模式的波长产生分裂, 分裂值可达0.037 nm. 同时, 随着氧化孔径的增大, 波长分裂影响会逐渐减小, 直至趋近于圆形氧化孔径的分布特性. 研究结果为进一步实现氧化限制型VCSEL的多横模锁定提供了有益参考和借鉴. 相似文献
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Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs) 下载免费PDF全文
The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift. 相似文献
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通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。 相似文献
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基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础. 相似文献
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A new luminescent Zn(II) compound, [Zn(pbdc)0.5(mtz)(DMPU)]n(1, H2pbdc = terephthalic acid, Hmtz = 5-methyl-1H-tetrazole, DMPU = N,N'-dimethylpropyleneurea), has been urothermally synthesized and characterized by elemental analysis, IR, X-ray powder diffraction(PXRD) and single-crystal X-ray diffraction. The title compound crystallizes in orthorhombic Pbca space group with a = 17.2649(5), b = 10.4680(3), c = 17.4457(7) ?, V = 3152.94(18) ?3, C12H17N6O3Zn, Mr = 358.71, Z = 8, Dc = 1.511 g/cm3, F(000) = 1480, μ = 1.579 mm-1, the final R = 0.0379 and wR = 0.0971 for 2785 observed reflections(I 2?(I)). Single-crystal X-ray structural analysis reveals that compound 1 features a 2D undulated layer with a 3-connected hcb topology. Moreover, the luminescent properties of 1 have also been investigated in the solid-state at room temperature. 相似文献
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A novel fusion bonding method between silicon and glass with Nd:YAG laser is described.This method overcomes the movable mechanical parts damage caused by the electrostatics force in micro-electronic machine-system(MEMS)device during the anodic bonding. The diameter of laser spot is 300 μm,the power of laser is 100 W,the laser velocity for bonding is 0.05 m/s,the average bonding tension is 6.3 MPa.It could distinctly reduce and eliminate the defects and damage,especially in movable sensitive mechanical parts of MEMS device. 相似文献
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光学平面绝对检验方法的研究 总被引:3,自引:0,他引:3
应用两种方法对三个高精度平面进行了测试。第一种方法是Fritz的三面互检法,它利用Zernike多项式的特性拟合三个面四次组合测量得到的干涉图,然后求出三个面的Zernike多项式系数,从而得到三个面的面形偏差。第二种方法是奇偶函数法,根据函数的奇偶性,把平面的面形函数分解为四类:偶奇、奇偶、偶偶和奇奇函数,分别求出各分量,从而得到三个面的三维面形偏差。对两种方法都编制了理论模拟和实测程序,并进行了实验,实现了无参考面的高精度平面面形测试。 相似文献
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(考试时间 :2 0 0 2年 8月 1 3日上午 8:3 0 - 1 1 :3 0 )注意 :考试中需要下列工具 :计算器、圆规、直尺 .参考公式 :三角形的面积k =12 absinC两角和与差的三角函数sin(A +B) =sinAcosB +cosAsinBcos(A +B) =cosAcosB -sinAsinBsin(A -B) =sinAcosB -cosAsinBcos(A -B) =cosAcosB +sinAsinB正弦定理asinA=bsinB=csinC余弦定理a2 =b2 +c2 - 2bccosA二倍角公式sin2A =2sinAcosAcos2A =cos2 A -s… 相似文献
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利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%. 相似文献