石英晶体板非线性高频振动的拓展伽辽金法分析

针对考虑几何和材料非线性的石英晶体板厚度剪切振动和弯曲振动的方程组,利用扩展伽辽金法对该方程组进行转化和求解,分别获得了强烈耦合的厚度剪切振动模态和弯曲振动模态的频率响应关系,绘制了不同振幅比和不同驱动电压影响下的频率响应曲线图。数值计算结果表明可以选取石英晶片的最佳长厚比尺寸来避免两种模态的强烈耦合。驱动电压的变化将引起石英晶体谐振器厚度剪切振动频率的明显改变,必须将振动频率的漂移值控制在常用压电声波器件的允许值之内。扩展伽辽金法对石英晶体板非线性振动方程组的求解为非线性有限元分析和偏场效应分析奠定了基础。     

基于摩擦磨损的KDP晶体固结磨料抛光垫优化

本文通过固结磨料球与KDP晶体对磨的单因素试验探究固结磨料球中反应物种类、磨粒浓度、反应物浓度、基体硬度对摩擦系数、磨痕截面积和磨痕处粗糙度的影响,试验结果表明:KHCO₃固结磨料球对磨后磨痕对称性好,磨痕处的粗糙度值低;磨痕截面积随磨粒和反应物浓度的增加而增大,随基体硬度的增大而降低;磨痕处粗糙度随磨粒和反应物浓度的增加先降低后上升,随基体硬度的增大先上升后降低;摩擦系数受磨粒和反应物浓度影响不明显,随基体硬度的增大而降低。选择KHCO₃作为反应物,Ⅰ基体,磨粒浓度为基体质量的100%,反应物浓度为15%制备固结磨料球与KDP晶体对磨后的磨痕轮廓对称度好且磨痕处粗糙度值低,以该组分制备固结磨料垫干式抛光KDP晶体,可实现晶体表面粗糙度Sa值为18.50 nm,材料去除率为130 nm/min的高效精密加工。     

蓝宝石衬底材料的研究及应用进展

蓝宝石因为其生产技术成熟、稳定性好、性价比高而被广泛应用于光电领域,成为GaN基光电器件的主要衬底材料.传统的蓝宝石衬底生长GaN薄膜存在许多问题,如由晶格常数不同产生的晶格失配、热应力失配等,且GaN薄膜结晶质量较差、光线提取效率低.介绍了图形化蓝宝石衬底技术在制作GaN基LED器件中的应用,比较了几种图形化衬底对LED的发光性能的影响.在图形化蓝宝石衬底上采用PVD法生长AlN薄膜,可以降低GaN薄膜的螺旋位错和刃位错、提高MOCVD生长效率、显著提高设备利用率.另外,介绍了蓝宝石衬底在SOS领域的应用,列出了SOS工艺对蓝宝石衬底的具体要求.蓝宝石作为一种重要的衬底材料,未来的发展前景会更加广阔.     

Facile preparation of Ag/Ag2WO4/g‐C3N4 ternary plasmonic photocatalyst and its visible‐light photocatalytic activity

Introducing plasmonic metals into semiconductor materials has been proven to be an attractive strategy for enhancing photocatalytic activity in the visible region. In this work, a novel and efficient Ag/Ag₂WO₄/g‐C₃N₄ (AACN) ternary plasmonic photocatalyst was successfully synthesized using a facile one‐step in situ hydrothermal method. The composition, structure, morphology and optical absorption properties of AACN were investigated using X‐ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and UV–visible diffuse reflectance spectroscopy, respectively. Photocatalytic performance of AACN was evaluated via rhodamine B and tetracycline degradation. The results indicated that AACN had excellent photocatalytic performance for rhodamine B degradation with a rate constant of 0.0125 min^?1, which was higher than those of Ag₂WO₄ and Ag/Ag₂WO₄. Characterization and photocatalytic tests showed that the strong coupling effect between the Ag/Ag₂WO₄ nanoparticles and the exfoliated ultrathin g‐C₃N₄ nanosheets was superior for visible‐light responsivity and reduced the recombination rate of photogenerated electrons and holes. A proposed mechanism is also discussed according to the band energy structure and the experimental results.     

Syntheses,Crystal Structures and Fluorescence Properties of Three Complexes Based on 2,2'-Quinoline-4,4'-dicarboxylic Ligands

Crystallography Reports - Three new coordination complexes, [Mn(L)(H2O)4⋅(H2O)3]2 (1), [Mg(L)(H2O)4⋅(H2O)3]2 (2), and [Cu(L)(phen)⋅(H2O)4]2 (3) (H2L =...     

Demonstration of joule-level chirped pulse amplification based on tiled Ti:sapphire amplifier

A novel tiled Ti:sapphire(Ti:S)amplifier was experimentally demonstrated with>1 J amplified chirped pulse output.Two Ti:S crystals having dimensions of 14 mm×14 mm×25 mm were tiled as the gain medium in a four-pass amplifier.Maximum output energy of 1.18 J was obtained with 2.75 J pump energy.The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier.The laser pulse having the maximum peak power of 28 TW was obtained after the compressor.Moreover,the influence of the beam gap on the far field was discussed.This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.     

高居里温度铁电单晶PIN-PT的机电性能

弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。