Comparison of new and existing algorithms for the analysis of 2D radioxenon beta gamma spectra

The aim of this paper is to compare radioxenon beta–gamma analysis algorithms using simulated spectra with experimentally measured background, where the ground truth of the signal is known. We believe that this is among the largest efforts to date in terms of the number of synthetic spectra generated and number of algorithms compared using identical spectra. We generate an estimate for the minimum detectable counts for each isotope using each algorithm. The paper also points out a conceptual model to put the various algorithms into a continuum. Our results show that existing algorithms can be improved and some newer algorithms can be better than the ones currently used.

     

Ion beam exposure of resists

Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 10¹¹ to 10¹³,cm^–2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.     

Discovery of a nuclear isomer in 65Fe with penning trap mass spectrometry

A new long-lived isomeric state in (65)Fe has been discovered with Penning trap mass spectrometry and high-precision mass measurements of the neutron-rich isotopes (63-65)Fe and (64-66)Co have been performed with the Low-Energy Beam and Ion Trap Facility at the NSCL. For the new isomer in (65)Fe an excitation energy of 402(5) keV has been determined from the measured mass difference between the isomeric and ground states. The mass uncertainties of all isotopes have been reduced by a factor of 10-100 compared to previous results. In the case of (64)Co the previous mass value was found to deviate by about 5 standard deviations from the new measurement.     

Precision Penning trap mass measurements of rare isotopes produced by projectile fragmentation

The low-energy beam and ion trap facility LEBIT at NSCL/MSU is at present the only facility where precision experiments are performed with stopped rare isotope beams produced by fast-beam fragmentation. LEBIT combines high-pressure-gas stopping with advanced ion manipulation techniques to provide brilliant low-energy beams. So far these beams have mainly been used for mass measurements on short-lived rare isotopes with a 9.4T Penning trap mass spectrometer. Recent examples include ^70m Br , located at the proton dripline, ³²Si and the iron isotopes ^63-65Fe . While the measurement of ³²Si helps to solve a long-standing dispute over the validity of the isobaric multiplet mass equation (IMME) for the A = 32 , T = 2 multiplet, the mass measurements of ^65m,g Fe marked the first time a nuclear isomeric state has been discovered by Penning trap mass spectrometry.     

Laser-induced electron impact ionization in a reflectron time-of-flight mass spectrometer

Some details of the generation of electrons by impinging a laser beam on a metal surface are described. It is shown that highly efficient electron generation is observed only during the laser pulse. Therefore, this technique delivers intense pulses of electrons. The process is investigated and different ion source set-ups are discussed. In conjunction with a time-of-flight mass spectrometer this technique can be used to produce mass spectra of different samples ranging from simple organic molecules to peptides.     

Arsenic-implanted polysilicon layers

The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10⁻³ exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.