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排序方式: 共有9107条查询结果,搜索用时 15 毫秒
1.
Hu  Duo-Duo  Gao  Qian  Dai  Jing-Cheng  Cui  Ru  Li  Yuan-Bo  Li  Yuan-Ming  Zhou  Xiao-Guo  Bian  Kang-Jie  Wu  Bing-Bing  Zhang  Kai-Fan  Wang  Xi-Sheng  Li  Yan 《中国科学:化学(英文版)》2022,65(4):753-761
Science China Chemistry - A light-induced, nickel-catalyzed three-component arylsulfonation of 1,3-enynes in the absence of photocatalyst is reported. This methodology exhibited mild conditions,...  相似文献   
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3.
Tian  Xiu-Zhi  Yang  Rui  Ma  Jia-Jia  Ni  Yong-Hao  Deng  Hai-Bo  Dai  Lei  Tan  Jiao-Jun  Zhang  Mei-Yun  Jiang  Xue 《高分子科学》2022,40(7):789-798
Chinese Journal of Polymer Science - Antistatic and strength properties are of vital importance for polyurethane rubber used in moving parts of many industrial instruments. Herein, polyurethane was...  相似文献   
4.
Nonlinear Dynamics - In this article, we analyze the $$L_{2}-L_{\infty }$$ filtering of multiagent systems for Markovian switch topologies under time-varying delays with an influence of...  相似文献   
5.
In recent years, spatial self-phase modulation (SSPM) with two-dimensional (2D) materials has attracted the attention of many researchers as an emerging and ubiquitous nonlinear optical effect. In this review, the state of the art of 2D material-based SSPM is summarized. SSPM measures or tunes the nonlinearity of 2D materials, and it is also an effective approach to study the band structure of 2D materials. Several modified forms of SSPM, such as high-order, white-light-excited, vector field excited, and optically nonlinearly enhanced SSPM are also presented. Subsequently, the physical origin of the SSPM formation mechanism is compared and analyzed. Furthermore, the applications of SSPM with 2D materials, including passive photonic devices, generation of Bessel beams, and identifying the mode of the orbital angular momentum, are listed. Finally, several urgent problems of the SSPM with 2D materials, potential applications, and prospects for future development are presented.  相似文献   
6.
Biradicaloid compounds with an open-shell ground state have been the subject of intense research in the past decade. Although diindenoacenes are one of the most developed families, only a few examples have been reported as active layers in organic field-effect transistors (OFETs) with a charge mobility of around 10−3 cm2 V−1 s−1 due to a steric disadvantage of the mesityl group to kinetically stabilize compounds. Herein, we disclose our efforts to improve the charge transport of the diindenoacene family based on hexahydro-diindenopyrene (HDIP) derivatives with different annelation modes for which the most reactive position has been functionalized with (triisopropylsilyl)ethynyl (TIPS) groups. All the HDIP derivatives show remarkably higher stability than that of TIPS-pentacene, enduring for 2 days to more than 30 days, which depends on the oxidation potential, the contribution of the singlet biradical form in the ground state and the annelation mode. The annelation mode affects not only the band gap and the biradical character (y0) but also the value of the singlet–triplet energy gap (ΔES–T) that does not follow the reverse trend of y0. A method based on comparison between experimental and theoretical bond lengths has been disclosed to estimate y0 and shows that y0 computed at the projected unrestricted Hartree–Fock (PUHF) level is the most relevant among those reported by all other methods. Thanks to their high stability, thin-film OFETs were successfully fabricated. Well balanced ambipolar transport was obtained in the order of 10−3 cm2 V−1 s−1 in the bottom-gate/top-contact configuration, and unipolar transport in the top-gate/bottom-contact configuration was obtained in the order of 10−1 cm2 V−1 s−1 which is the highest value obtained for biradical compounds with a diindenoacene skeleton.

Biradicaloid HDIP derivatives show that the ΔES–T gap does not follow the reverse trend of the biradical character but depends more on the delocalization of the radical centres at the outer rings.  相似文献   
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窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁输运测试,在压电陶瓷未加电压时观察到了明显的SdH振荡效应.对填充因子与磁场倒数进行线性拟合,获得样品反型层二维电子气的载流子浓度为ns=1.25×10^16m^-2.在不同磁场下,利用压电陶瓷对样品进行应力调控,观测到具有不同特征的现象,分析应是样品中存在二维电子气与体材料两个导电通道.零磁场下体材料主导的电阻的变化应来源于应力导致的带隙的改变;而高场下产生类振荡现象的原因应为应力导致的二维电子气能级的分裂.  相似文献   
9.
Dai  Chao-Qing  Wang  Yue-Yue  Fan  Yan  Yu  Ding-Guo 《Nonlinear dynamics》2018,92(3):1351-1358
Nonlinear Dynamics - Gaussian spatial soliton solutions of both the constant-coefficient and variable-coefficient (2 + 1)-dimensional nonlinear Schrödinger equations in...  相似文献   
10.
Although tremendous efforts have been devoted to understanding the origin of boosted charge storage on heteroatom-doped carbons, none of the present studies has shown a whole landscape. Herein, by both experimental evidence and theoretical simulation, it is demonstrated that heteroatom doping not only results in a broadened operating voltage, but also successfully promotes the specific capacitance in aqueous supercapacitors. In particular, the electrolyte cations adsorbed on heteroatom-doped carbon can effectively inhibit hydrogen evolution reaction, a key step of water decomposition during the charging process, which broadens the voltage window of aqueous electrolytes even beyond the thermodynamic limit of water (1.23 V). Furthermore, the reduced adsorption energy of heteroatom-doped carbon consequently leads to more stored cations on the heteroatom-doped carbon surface, thus yielding a boosted charge storage performance.  相似文献   
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