在蓝宝石衬底上外延生长ZnGa2O4纳米线及其表征

使用一种简单的化学气相沉积法成功地在c面蓝宝石衬底上外延生长了整齐排列的ZnGa2O4单晶纳米线.研究了在不同生长温度和生长压力下外延生长ZnGa2O4纳米线,并使用XRD,SEM和TEM对产物进行了表征.结果 表明,在生长条件为980℃和100 Torr时,可以外延生长出整齐排列的ZnGa2O4纳米线.所制备的ZnGa2O4纳米线直径为60 ～ 150 nm,并遵循Au催化的VLS生长机制沿其四个结晶学方向在蓝宝石上外延生长.分析了纳米线沿四个方向生长的原因,并对纳米线的光致发光性能进行了探讨.     

Facile Route to Control over the Morphological Evolution of β-Ga_2O_3 from Nanowires to Nanoflags and to Nanosheets

We report the fabrication of β-Ga_2O_3 nanostructures on Au-coated(0001) sapphire substrate by chemical vapor deposition. The morphologies and structural properties of β-Ga_2O_3 nanostructures were characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Different morphologies including nanowire, nanoflag and nanosheet were controllably synthesized by adjusting the important growth parameters of ambient source contents. It is suggested that the relative ratio of oxygen and gallium contents plays a significant role in determining the morphologies of β-Ga_2O_3 nanostructure.