高压双扩散漏端MOS晶体管双峰衬底电流的形成机理及其影响

利用0.15μm标准CMOS工艺制造出了工作电压为30V的双扩散漏端MOS晶体管(double diffused drain MOS, DDDMOS).观察到DDDMOS的衬底电流-栅压曲线(I_b-V_g曲线)有两个峰.通过实验和TCAD模拟揭示了DDDMOS衬底电流的形成机理,发现衬底电流第一个峰的成因与传统MOS器件相同;第二个峰来自于发生在漂移区远离沟道一侧高场区的碰撞离化电流.通过求解泊松方程和电流连续性方程,分析了器件的物理和几何参数对导致衬底电流重新上升的漂移区电场的影响.在分析了DDDMOS衬底电流的第二个峰形成机理的基础上,考察了其对器件的可靠性的影响. 关键词： 高压器件 衬底电流 可靠性     

超声化学法制备树枝状纳米银的研究

Nanostructured silver dendrites were synthesized by using sonochemical method from an aqueous solution of AgNO₃ in the presence of isopropanol as reducing agent and polyethylene glycol (PEG) as disperser. The silver nanostructures were characterized by using TEM， XRD and EDS analysis. The effects of reducing agents， dispersers， concentration of AgNO₃ on the silver dendrites nanostructures were also invetigated. A well-defined nanostructured silver dendrite was prepared by ultrsonic irradiation of the aqueous solution of 0.04 mol·L^-1 silver nitrate， 4.00 mol·L^-1 isopropanol and 0.04 mol·L^-1 PEG400 for 1 h.