利用智能手机快速测定水环境中的六价铬含量

利用智能手机和小木盒构建的数字图像比色法(DIC)完成了水中六价铬浓度的快速检测。利用智能手机能够同时对显色溶液进行照明、图像采集和数据处理,可以快速定量检测六价铬。在六价铬0.05～0.80mg/L浓度内有良好的线性范围,线性方程为y=127.939x+73.181,相关系数为0.994;考察了方法的重现性,对2种质量浓度样品进行检测,其相对标准偏差(RSD)为1.5%～5.5%,测定结果和分光光度法对水样进行测定的结果基本一致,证明了方法的可靠性及准确性。     

CS-800红外碳硫分析仪测定合金钢中的碳和硫

研究了碳硫分析在不同钨助熔剂加入量及不同分析时间的条件下所得碳、硫元素含量,首次结合分析曲线验证最佳条件,并对碳、硫分析可能存在的误差进行浅析.     

3-{1-苯基-5-[N,N-二(2′-氯乙基)-氨基]-苯并咪唑-2-基}-丙酸

以2,4-二硝基氯苯和苯胺为起始原料,经取代、还原、酰化、环合、水解和成盐等八步反应合成目标化合3-{1-苯基-5-[N,N-二(2′-氯乙基)-氨基]-苯并咪唑-2-基}-丙酸,产物及重要中间体的结构均经1H NMR、IR得到确证。     

High-pressure structure and elastic properties of tantalum single crystal:First principles investigation

Since knowledge of the structure and elastic properties of Ta at high pressures is critical for addressing the recent controversies regarding the high-pressure stable phase and elastic properties, we perform a systematical study on the highpressure structure and elastic properties of the cubic Ta by using the first-principles method. Results show that the initial body-centered cubic phase of Ta remains stable even up to 500 GPa and the high-pressure elastic properties are excellently consistent with the available experimental results. Besides, the high-pressure sound velocities of the single- and polycrystals Ta are also calculated based on the elastic constants, and the predications exhibit good agreement with the existing experimental data.     

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET. These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.     

均相液液萃取-数字成像比色法测定水中痕量六价铬北大核心CSCD

提出了均相液液萃取-数字成像比色法测定水中痕量六价铬的方法。取2.5 mL水样,依次加入0.125 mL十二烷基硫酸钠溶液(20 g·L^(-1))、0.3 mL硫酸溶液(0.5 mol·L^(-1))和0.125 mL含0.04 mol·L^(-1)二苯碳酰二肼的丙酮溶液,摇匀,反应5 min。再用60μL邻苯二甲酸二甲酯和400μL异丙醇的混合液进行萃取,涡旋,离心,通过智能手机比色装置中的Color Grab软件读取萃取层的绿(G)值。结果显示:六价铬标准曲线的线性范围为4~60μg·L^(-1),检出限(3s/k)为1μg·L^(-1);对实际水样进行加标回收试验,本方法所得六价铬测定值与国家标准方法GB 7467-1987的基本一致,回收率为87.8%~109%,测定值的相对标准偏差(n=6)为2.4%~3.7%。     

Enhancing visible-light photocatalytic activity of α-Bi2O3 via non-metal N and S doping

In recent years, some important research indicated that the visible-light activity of photocatalysts could be enhanced via incorporating p-block non-metal elements into the lattice. In this paper, we investigated the electronic structures of pure and different non-metal （C, N, S, F, Cl, and Br） doped α-Bi2O3 using first-principles calculations based on the density functional theory. The band structures, the electronic densities of states, and the effective masses of electrons and holes for doped α-Bi2O3 were obtained and analyzed. The N and S dopings narrowed the band gap and reduced the effective mass of the carriers, which are beneficial for the photocatalytic performance. The theoretical predication was further confirmed by the experimental results.