空中目标多波段红外辐射特性描述与仿真分析

针对空中目标在复杂背景下的探测需求,根据实际目标的运动特性,分析目标在飞行高度、飞行姿态角改变时的辐射特点,基于MODTRAN计算得到大气辐射和衰减数据,建立目标的三维模型、热辐射和反射模型,搭建空中目标的红外成像仿真系统.分析和仿真结果表明:在中波波段,目标尾焰的红外辐射比蒙皮强很多,在长波波段,蒙皮的红外辐射比较强,仿真图像的细节比较多,尾焰的红外辐射虽然有所减弱,红外成像效果依旧很好;相同探测条件下,由于位置越高大气越稀薄,探测器的可探测距离会变得比较远.目标红外辐射特性的分析和红外仿真系统的搭建对缩短红外探测器的研制周期和进一步确定探测器波段和系统分辨率等指标提供了参考依据.     

手性方酰胺催化巴比妥酸和硝基烯的不对称Michael加成反应

用手性环己二胺衍生的方酰胺催化1,3-二甲基巴比妥酸和硝基烯的不对称Michael加成反应,合成了一系列新型巴比妥衍生物,其结构经¹H NMR和¹³C NMR表征。并考察了底物结构对反应收率和立体选择性的影响。结果表明：该反应可获得较高的收率(80%~100%)和中等至良好的对映选择性(ee 43%~90%)。     

Correlations between Strong Range Spread-F and GPS L-Band Scintillations Observed in Hainan in 2004

Data from the DPS-4 digisonde and the GPS L-band ionospheric scintillation monitor are employed to study the correlations between strong range spread-F （SSF） and GPS L-band scintillations observed in the ionosphere over Hainan Island, China （19.5°N, 109.1°E geogr., dip lat. 9°N） in 2004. The SSF in the ionogram is different from the general range spread-F because it extends in frequency well beyond FoF2 and makes FoF2 difficult to be determined. The observations show that the SSF phenomenon is frequently accompanied by the occurrence of GPS L-band scintillations. The SSF and GPS L-band scintillations occur frequently in the equinoctial months （March, April, September, and October）, but rarely in the winter （January, February, November, and December） and summer （May-August）; especially, occurrence variations of the SSF and GPS L-band scintillations nearly have a same trend. The SSF and scintillations may be associated with the occurrence of topside plasma bubbles and could be explained by the eneralized Rayleigh-Taylor instability.     

Dipion decays of heavy baryons

Compared with the charmed baryons, the bottom baryons are not very well known, either experimentally or theoretically. In this paper, we investigate the dipion strong decays of the P-wave and D-wave excited bottom baryons in the framework of the QPC model. We also extend the same analysis to the charmed baryons.     

Hot Oxygen Corona at Mars and Its Effect on Solar Wind Deceleration

Phobos 2 plasma measurements have revealed solar wind deceleration of about 100 km/s upstream of the Martian bow shock. It is suggested that the deceleration is due to the mass loading by the ions originating from the hot oxygen corona of Mars. In this study, we use a gas-dynamic model to estimate the solar wind deceleration caused by the mass loading effect and the result shows that the deceleration is only about 10-15 km/s when we invoke the well established hot oxygen corona density profiles.     

太赫兹硅雪崩渡越时间二极管低温特性研究

本文给出了准确描述硅雪崩渡越时间二极管工作特性的大信号仿真模型,研究了影响硅雪崩越时间(IMPATY,Impact Avalanche Transit Time)二极管工作状态的离化率和饱和漂移速度,考虑Si-IMPATT二极管热限制的条件下,计算了二极管的最大工作电流.通过大信号仿真分析,我们得到如下结果:(1)随着温度的降低,二极管输出功率提高;(2)随着温度的降低,二极管工作频率向高端偏移,本文还建立了液氮制冷环境下IMPATT振荡器的测试系统,与常温工作相比,77K低温环境下IMPATT二极管的输出功率提高了47.8%,频率也向高端偏移了6.3%,实验结果与仿真预测一致.     

空间环境之无线电探测

 20世纪初, 爱德华·阿普尔顿等用连续波和脉冲波的试验方法证实了电离层的存在, 开创了用无线电方法探测电离层的技术的历史。     

生物分子相互作用动力学的表面等离子体共振研究方法

表面等离子体共振及其成像方法以其免标记、可实时动态原位跟踪反应过程而在生物分子相互作用动力学及其常数测定研究中凸显优势,近年来这方面的研究进展迅速,但缺乏必要的总结归纳.为此,本文就这一主题所涉及的关键研究方法与应用进展作简要的归纳分析并展望了该领域的发展前景.     

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.