Ti_3AlC_2的制备及Ti_3C_2T_x薄膜的电化学性能研究

采用一步机械合金化的方法合成了高纯度Ti_3AlC_2.以此高纯度Ti_3AlC_2为前驱体,采用简单安全的方法进行腐蚀剥离,成功地制备出具有良好柔韧性的Ti_3C_2T_x薄膜电极.在1 M KOH电解液中进行电化学测试,扫速为2 mV/s时,Ti_3C_2T_x的体电容可达到509.7 F/cm~3,10000圈充放电循环后,电容保持率高达95%.因此,一步机械合金化方法合成的Ti_3AlC_2适用于Ti_3C_2T_x薄膜的制备,且得到的Ti_3C_2T_x薄膜具有很好的电容性质,可用于超级电容器电极材料.     

现代课程与教学论核心思想在大学物理实验教学中的应用

基于现代课程与教学论主要流派的核心思想,联系国内外大学物理实验教学的实际,应用人本主义和结构主义课程与教学观有针对性地指导大学物理实验教学实践,提出了有利于培养学生科研能力和创新能力的教学新模式,克服了传统物理实验教学模式千人一面的弊端,顺应了社会对培养高素质、创新型人才的需求。     

Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

One-dimensional（ID） In₂O₃（ZnO）_m superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the In₂O₃（ZnO）_m superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cm^-1 is found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the In₂O₃（ZnO）_m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.     

Novel photoluminescence properties of InAlO3（ZnO）m superlattice nanowires

One-dimension InAlO 3 (ZnO) m superlattice nanowires were successfully synthesized via chemical vapor deposition.Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 0001 direction.The photoluminescence properties of InAlO 3 (ZnO) m superlattice nanowires are studied for the first time.The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states.The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region.A new luminescence mechanism is proposed,combined with the special energy band structure of InAlO 3 (ZnO) m.