High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

复合物Mg+-S2(CH3)2的光诱导反应

研究了230~440 nm波段复合物Mg+-S2(CH3)2的单光子光诱导反应. 复合物光诱导产物的质谱揭示, 存在着非反应猝灭产物Mg+和反应产物Mg+SCH3. 复合物的光解离光谱由三个对应于离子Mg+(32P←32S)跃迁的宽谱峰构成. 用量化计算中的CIS方法所得的吸收谱理论值与实验值吻合较好.     

顶空固相微萃取-气质联用分析小麦储藏过程中挥发性成分变化

采用顶空固相微萃取(HS-SPME)和气相色谱-质谱联用(GC-MS)对不同储藏时间弱(强)筋小麦中的挥发性物质进行提取、鉴定与分析.选用复合萃取纤维二乙烯基苯-炭烯-聚二甲硅氧烷共聚物(DVB/CAR/PDMS)50 μm涂层,对萃取温度、时间、样品用量和解析时间进行优化.结果表明: HS-SPME测定挥发性物质的最佳前处理条件样品量20 g, 萃取温度75 ℃, 萃取时间60 min, 260 ℃条件下解析5 min;经鉴定分析小麦挥发性成分主要有烃类、醛类,其次为醇类、酮类;挥发性成分总含量在储藏6个月内均呈现先降后增的趋势.弱筋小麦的烃类挥发物相对量随储藏时间延长而快速增加,醛类相对含量先降后升,而酮类和醇类相对含量则逐渐下降;强筋小麦中除烃类相对含量呈先下降而后快速增加外,其余各类挥发物含量均与弱筋小麦呈现相同的规律.储藏6个月后,变化较明显的挥发性物质有己醇、己醛、2,6,10-三甲基-十二烷、十五烷和二十烷.