AE-HG-AFS测定长期汞暴露人群补硒后尿中硒的形态

建立了一种利用阴离子交换高效液相色谱与氢化物发生原子荧光光谱联用同时测定四、六价硒及硒代半胱氨酸(SeCys)形态的方法。优化了六价硒的还原条件及仪器检测参数,以不同浓度的柠檬酸铵作为流动相,在10 min内同时分离了四、六价硒及硒代半胱氨酸(SeCys)。采用加标法定量,加标回收率在90%～119%之间,相对标准偏差为1.6%～3.1%(100μg/L),四、六价硒及硒代半胱氨酸(SeCys)的检出限分别为0.32μg/L、0.47μg/L和0.44μg/L(进样量为100μL)。应用该法对长期汞暴露人群补硒后尿中的小分子硒的形态进行了分析,仅检测到硒代半胱氨酸(SeCys)。     

Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique

Time-of-flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the direct current (DC) and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI$_{3}$ single crystal detector. Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and the hole lifetime is around 6.5 μs-17.5 μs. Hence, the mobility-lifetime product can be derived to be $1.4\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$-$3.9\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias, which arises mainly from the inhomogeneous electric field distribution inside the perovskite. The positive space charge density can then be deduced to increase from 3.1$\times10^{10}$ cm$^{-3}$ to 6.89$\times 10^{10}$ cm$^{-3}$ in a bias range of 50 V-150 V. The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals, and is also helpful in obtaining a rough picture of the internal electric field distribution.