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凝聚态和相变物理的一个重要部分是研究有序相的状态和缺陷,近二十年来,应用代数拓扑学方法对有序介质的状态和缺陷进行分类,增进了人们对相变等过程的认识,从而引起广泛的注意,虽然从本质上说,缺陷拓扑分类也可纳入状态拓扑分类的框架,国际上迄今的有关研究却主要针对缺陷;除织构(孤子)态外,对一般状态甚少涉及,本文试图 相似文献
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用广义函数理论对δ-点阵函数的Fourier变换公式(?)δ(r-R)=(1/V_0)(?)(h-H)做了进一步的证明,指出了它与Fourier级数展开的关系;结合实例说明了应用此公式后衍射几何的理论体系能得到显著的简化;还根据这个公式纠正了几例在文献中常出现的错误。 相似文献
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We extend the hole confinement model of Edwards et al. to the problem of two kinds of complex magnetic sandwich structures. One is the magnetic sandwich covered on both sides by nonmagnetic films(case 1) and the other is that covered by magnetic films(case 2). The interlayer exchange coupling and the angular dependence of coupling energy in the two cases are investigated systematically. For case 1, our results show that the magnetic and outer nonmagnetic films influence significantly the oscillation behavior of exchange coupling and the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers. Our results also show that the nonoscillatory component of the coupling generally varies with the thickness of magnetic(outer nonmagnetic) films and the results in the case where the thickness of both magnetic(outer nonmagnetic) films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic(outer nonmagnetic) films is fixed while the other is varied, which is qualitatively in agreement with the experimental measurements. For case 2, the exponential dependence of exchange coupling on the thickness of the intermagnetic layer has been obtained, similar to the Parkin's experimental results for giant magnetoresistance. 相似文献
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A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device. 相似文献
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根据Lewis-Riesenfeld的量子不变量理论,计算了一维动壁无限深势阱内频率随时间变化的谐振子的Lewis-Riesenfeld相位,发现刘登云文中“非绝热Berry相位”与Lewis-Riesenfeld相位中的几何部分完全一致.也许更为重要的是,证明了至少对于做正弦振动的边界,在绝热近似下,该系统不存在非零的Berry相位.
关键词:
Berry相位
Lewis-Riesenfeld相位
量子不变量
动边界 相似文献