甲烷-空气最小点火能量预测理论模型

 最小点火能是可燃气体危险性辨识的重要参数之一。为从理论上得到混合气体的最小点火能,建立了可燃气体火花点火的物理模型,给出了通过数值模拟得到的可燃气体最小点火能量的预测方法,采用该方法得到了甲烷-空气混合气火花点火的临界温度及最小点火能量。结果表明：甲烷-空气混合气的最小点火能量与浓度呈U型关系,浓度为8.5%的预混气的最小点火能量计算值为0.39 mJ,与实验值0.4 mJ吻合较好。     

铜丝水中电爆炸能量沉积特性

对s脉冲电压作用下铜丝水中电爆炸的能量沉积过程进行了实验研究,利用自积分Rogowski线圈和电阻分压器分别测量铜丝电爆炸时的电流和电压。利用测量电压波形确定了熔融起始、熔融结束、汽化起始和击穿时刻点,将铜丝电爆炸划分成熔融、液态和汽化3个阶段。通过数学方法计算了3个阶段和击穿前的沉积总能量。通过实验和计算,分析了电路参数,包括放电电压和回路电感,以及铜丝特性,包括铜丝长度和直径,对铜丝电爆炸过程中3个阶段和击穿前沉积总能量的影响。结果表明:在s脉冲电压作用下,放电电压、回路电感、铜丝长度和直径对熔融阶段能量沉积影响较小,但对液态和汽化阶段能量沉积影响较大,通过调节电路参数提高电流上升速率,可以显著提高汽化和击穿前的沉积能量。     

固液混合装药热传导特性对其安全性影响的计算研究

固液混合装药物理参数是影响装药安全性的主要因素之一,利用混合炸药计算物理参数的方法,计算了几种典型配比装药的物理参数,根据能量守恒方程对不同物理参数的装药进行数值模拟。计算得到:在温度载荷相同的条件下,不同的物理参数对其温度响应有较大的差别,说明分析固液混合装药安全性时,应考虑装药不同比例对其安全性的影响,才能真实反应热点能量演化过程,为分析固液混合装药的安全性提供一定的理论依据。     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.     

Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.     

Kink effect in current-voltage characteristics of a GaN-based high electron mobility transistor with an AIGaN back barrier

The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

制备方法对V2O5/WO3-TiO2催化剂脱除柴油车尾气中NOx的影响

分别采用普通浸渍法(VWTi-con)和超声辅助浸渍法(VWTi-HUST)制备了V2O5/WO3-TiO2催化剂,并用X射线衍射、扫描电镜、拉曼光谱和X射线光电子能谱等技术对催化剂进行了表征,评价了水热老化前后两种催化剂的NH3-SCR脱除模拟柴油车尾气中NOx的反应活性,并与国外成熟商品催化剂进行了比较.结果表明,制备方法可影响V2O5/WO3-TiO2催化剂的水热稳定性,VWTi-con催化剂老化后几乎完全失活,而VWTi-HUST具有优异的水热稳定性,与国外成熟商品催化剂性能相当.与传统浸渍法相比,超声辅助浸渍法增强了活性物种和载体的相互作用,提高了活性组分的分散性等.采用该法制备的VWTi-HUST催化剂将具有较强的商业应用性;台架试验正在进行中,以期满足柴油车国IV排放标准的要求.     

GaN HEMT栅边缘电容用于缺陷的研究

本文对GaN HEMT栅漏电容的频率色散特性进行分析,认为栅边缘电容的色散是导致栅漏电容频率色散特性不同于圆肖特基二极管电容的主要原因. 通过对不同栅偏置条件下缺陷附加电容与频率关系的拟合,发现小栅压下的缺陷附加电容仅满足单能级缺陷模型,而强反向栅压下的缺陷附加电容同时满足单能级和连续能级缺陷模型. 实验中栅边缘电容的频率色散现象在钝化工艺后出现,其反映的缺陷很可能是钝化工艺引入,且位于源漏间栅金属未覆盖区域的表面. 最后通过低频噪声技术进一步验证栅边缘电容提取缺陷参数的可行性. 低频噪声技术获得的单能级 关键词： HEMT 边缘电容 缺陷 低频噪声