纳米金信号探针/石墨烯修饰免疫传感器检测微囊藻毒素

利用石墨烯纳米片层(GS)偶联牛血清白蛋白(BSA)标记的微囊藻毒素(MCLR)(BSA-MCLR)构建了纳米金(Au NPs)为信号探针的电流型免疫传感器。分别用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和紫外-可见吸收光谱对合成纳米材料进行表征;用循环伏安法研究修饰电极表面的电化学特性。通过待测MCLR与固定的BSA-MCLR竞争结合抗体(anti-MCLR),之后恒电位将Au NPs氧化为Au Cl-4,再利用差分脉冲伏安法(DPV)进行阴极电位扫描,还原Au Cl-4为Au,以产生的峰电流值为检测信号,测定MCLR浓度。最佳实验条件下,用免疫传感器测定MCLR的线性范围为0.1~50μg/L,检出限为0.05μg/L。对传感器的重现性、稳定性和选择性进行了考察。相较于酶标探针,以Au NPs为信号探针标记抗体,可使检测过程更经济便捷,稳定性更强,检测效果良好。     

在容量分析计算上应用的一种图表

钢铁厂炉前化验室每天要分析大批定硫试样及定炉渣氧化钙试样,而它们均是采取容量法,大量的分析数据的计算,给分析工作者带来不小的负担,因此我们就试制了一种简便的图表法,不用通过计算,而能够从所消耗的标准溶液的毫升数直接读出结果的百分数来。大家知道,在容量分析计算上,当称样固定不变时(我们一直习惯这样做),不难通过简化,将计算式化为消耗标准溶液的毫升数V乘一常数C,而直接得到分析结果百分数:     

微型填充式气相色谱柱的制备（英文）北大核心CSCD

为了分离永久性气体及低碳轻化合物,基于MEMS技术,研究制备了一种微型填充式的气相色谱柱。为了增加色谱柱的长度以及深宽比,色谱柱的沟道制备采用了激光刻蚀技术,这种技术可以方便的在玻璃基底上刻蚀出深沟道,这是其他化学腐蚀技术无法比拟的。研制的色谱柱其沟道横截面为1.2mm(深度)×0.6mm(宽度),深宽比为2∶1。实验结果表明,这种微型填充柱,具有较大的样品容量,能很好的实现CO和SO_2的分离。     

Fabrication processing effects on microstructure and morphology of erbium film

The effects of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by the electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have (002) preferred orientation, and the films deposited at 450 ℃ have mixed (100) and (101) texture, which are due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with the increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling down to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of substrate--film couple.     

Si基Sc膜的制备及结构分析

采用电子束镀膜方法在Si基底上制备了Sc膜,利用XRD,SEM分析了不同镀膜工艺条件下制备的Sc膜的形貌和结构。结果表明:基底温度在350～550 ℃时,薄膜主要由单质Sc组成,而且随着基底温度的升高,膜的颗粒尺寸增大,膜也变得更加致密;基底温度提高至650 ℃时,膜全部由ScSi化合物组成,膜变成颗粒状结构。沉积速率对低温时Sc膜的形貌与结构的影响不明显,颗粒尺寸随沉积速率的增大而增大,但物相结构基本没有发生变化;而在高温650 ℃时,沉积速率对膜的形貌与结构产生了很大的影响,随着沉积速率的增大,膜表面出现了大量微裂纹,而且较低的沉积速率有利于获得衍射峰单一的膜,增大沉积速率将会导致衍射峰数量明显增加。     

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200°C have (002) preferred orientation, and the films deposited at 450°C have a mixed (100) and (101) texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.