氮离子注入GCr15轴承钢改性的时效机理及摩擦学性能探讨

对１２年前经离子注入处理后的ＧＣｒ１５轴承钢表面耐磨性能的时间效应进行了探讨。发现离子注入材料的改性效果存在时间效应性。利用ＡＥＳ和Ｘ射线衍射分析发现，掺杂原子及材料表面吸附的氧原子的多元迁移和硬质相的生成是造成离子注入材料改性时效的原因。     

一类Banach空间的若干性质

本文主要研究了Ｂａｎａｃｈ空间（１≤ｐ＜∞）及其对偶空间的若干结构性质（这里Ｘ０是Ｂａｎａｃｈ空间Ｘ的闭子空间），得到了一些较有意义的结果．     

α-氨基膦酸酯衍生物的合成及其表征

合成了一系列N端含有均三唑并噻二唑的α-氨基膦酸酯衍生物, 其结构经过红外、核磁共振氢谱、磷谱、质谱和高分辨质谱等确证.     

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried oxide(BOX) in an SOI device is split into two sections: the source-section BOX and the drain-section BOX. A highly-doped Si layer, referred to as a non-depletion potential-clamped layer(NPCL), is positioned under and close to the two BOX sections. In the split BOXes and the Si region above the BOXes, the blocking voltage(BV) is divided into two parts by the NPCL. The voltage in the NPCL is clamped to be nearly half of the drain voltage. When the drain voltage approaches a breakdown value, the voltage sustained by the source-section BOX and the Si region under the source are nearly the same as the voltage sustained by the drain-section BOX and the Si region under the drain. The vertical BV is therefore almost doubled. The effectiveness of this new structure was verified for a P-channel SOI lateral double-diffused metal-oxide semiconductor(LDMOS) and can be applied to other high-voltage SOI devices. The simulation results show that the BV in an NPCL P-channel SOI LDMOS is improved by 55% and the specific on-resistance(Ron,sp) is reduced by 69% in comparison to the conventional structure.     

基础设施投资对经济增长推动作用的动态计量模型与分析

本文通过建立误差修正模型定量分析中国及其东、中、西部地区基础设施对经济增长推动作用。在模型中,分析了中国及其东、中、西三大地区基础设施投资GDP的弹性系数,其弹性大,推动效率高。因此得出基础设施投资在国民经济中起重要作用,能够极大地刺激GDP增长。     

EXTREME POINTS AND SUPPORT POINTS OF A CLASS OF ANALYTIC FUNCTIONS

1IntroductionByAwedenotethespaceoffunctionsanalyticintheunitdisk.ThetopologyofAisdefinedtobethetoPologyofuniformconvergenceoncompartsubsetsoftheunitdisk.SupposethatFisacomPactsubsetofA,feF.IfthereexistsacontinuouslinearfunctionalJonA,satisfyingthatffeJisnon-constantonF,suchthatthenjiscalledasupportpointofr.ThesetofallsupportpointsofFisdenotedbysUppF.SupposethatUisasubsetofA'fEUiscalledanextremepointofUiffcannotbeexpressedasaproperconvexcombinationoftwodistinctelementsofU.Thesetbfalle…     

SiGe/Si异质结缺陷的光致发光研究

本文用光致发光(PL)光谱对Si0.87Ge0.13/Si异质结的缺陷进行了研究。对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。由于在PL光谱中观察到了D1而没有观察到D2,因此D1,D2很可能并不对应于相同的位错。通过进一步的分析,我们推测引起SiGe/Si异质结的PL光谱中D-Band的位错的微观结构很可能和Si-Si相关。