基于图像灰度信息的直线位移测量

提出了一种基于视觉的新型直线位移测量方法。建立了图像各像素点灰度值与直线运动位移间的映射函数模型,通过数值方法解算了直线运动平台的位移。通过蒙特卡罗仿真对所提方法进行分析,证明了其可行性与合理性。分析了检测点拓扑结构对测量精度的影响。实验结果表明,在10 mm的位移测量范围内,所提方法的测量误差标准差为4μm。     

硅表面化学镀银晶籽层生长过程的研究

室温下在HF+AgNO₃溶液中于硅表面制备了银晶籽层。利用开路电位时间曲线（OCP-t）、阳极溶出伏安法（ASV）以及扫描隧道显微镜（STM）等方法研究了硅表面银晶籽层的形成过程，解释了银晶核长大的过程。提出了银晶籽在硅表面的生长机理是：首先是在硅表面没有被完全覆盖的情况下，单层银晶籽生长的同时伴随有多层的生长，此后单层逐渐形成连续的薄膜，在单层晶籽层上多层薄膜逐渐增厚，并伴随有部分银原子向硅中的扩散。     

硅电极/溶液界面开路电位-时间谱和原子力显微镜在化学镀Ag中的应用研究

用开路电位-时间谱技术,表征了在硅（100）表面化学镀银的硅电极/溶液界 面吸附态。所得结果与原子力显微镜在纳米尺寸上的面结构信息分析结果作了对比 。同时也将该结果与循环伏安法（CV）结果作了比较。证明当硅电极表面具有单层 吸附Ag~+离子、表面单层吸附Ag~+离子发生沉积反应、Ag~+离子发生本体沉积时的 开路电位-时间曲线有完全不同的特征。     

聚乙二醇类表面活性剂对硅表面无电沉积Ag膜光滑作用研究

应用原子力显微镜技术及开路电位～时间谱技术,研究了非离子表面活性剂聚乙二醇2000,6000,20000对硅(100)表面无电沉积银膜的光滑作用.实验表明硅(100)表面无电沉积银的光滑程度以及镀层的质量均随聚乙二醇聚合度的增加而变好.     

Study of the Electroless Silver Seed Formation on Silicon Surface

The silver seed on silicon was prepared through aqueous I-IF and AgNO3 solution at room temperature. In order to explore the formation process of silver seed on silicon, the methods of open circuit potential with time （OCP-t）, anodic stripping sweep voltammetry （ASV） and scanning tunneling microscope （STM） were used in this work. The procedure of silver nucleus growing into large particles was explained by electro-negativity. The growth mechanism of silver seed on silicon has been presented： at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.     

聚苯胺共价接枝碳纳米管负载Pt催化剂的制备及对甲醇电催化性能的研究

以氨基化的碳纳米管为基体,通过界面聚合方法将聚苯胺共价接枝于碳纳米管表面,负载催化剂颗粒Pt. 通过透射电镜(TEM)、X射线衍射(XRD)及电化学方法对催化剂进行了表征. TEM结果表明通过界面聚合的方法可以使聚苯胺均匀地接枝于碳纳米管表面. 电化学测试结果表明,碳纳米管共价接枝聚苯胺作为载体可以提高催化剂的抗CO中毒性能,有利于对甲醇的催化氧化. 研究其对甲醇的催化活性,并与商业的JM(Pt/C)催化剂进行了对比. 结果表明,碳纳米管共价接枝聚苯胺,有效提高了催化剂的稳定性,延长催化剂的寿命.     

Highly dispersed Pd nanoparticles on chemically modified graphene with aminophenyl groups for formic acid oxidation

A novel electrode material based on chemically modified graphene (CMG) with aminophenyl groups is covalently functionalized by a nucleophilic ring-opening reaction between the epoxy groups of graphene oxide and the aminophenyl groups of p-phenylenediamine. Palladium nanoparticles with an average diameter of 4.2 nm are deposited on the CMG by a liquid-phase borohydride reduction. The electrocatalytic activity and stability of the Pd/CMG composite towards formic acid oxidation are found to be higher than those of reduced graphene oxide and commercial carbon materials such as Vulcan XC-72 supported Pd electrocatalysts.     

聚苯胺共价接枝碳纳米管复合材料的制备及其超电容性能的研究

以氨基化的碳纳米管为基体, 通过低温原位聚合的方法将聚苯胺共价接枝于碳纳米管表面, 通过透射电镜(TEM)、X射线衍射(XRD)、紫外可见光(UV-vis)、傅里叶红外(FT-IR)、拉曼(Raman)及电化学方法对复合材料进行了表征. 结果表明通过低温原位聚合的方法可以使聚苯胺均匀接枝于碳纳米管表面. 电化学测试结果表明, 碳纳米管共价接枝聚苯胺作为超级电容器材料在0.5 A/g条件下聚苯胺的电容贡献值为754.8 F/g, 同时其倍率性能以及循环稳定性方面都明显优于聚苯胺非共价修饰的碳纳米管复合材料.     

Au/Si 载体负载单层Pt 催化剂的制备及其电催化性能的研究

以Si 纳米粉为载体, 通过化学镀的方法在其表面部分沉积纳米Au 颗粒后, 再通过欠电位的方法在Au 颗粒表面沉积了单层及亚单层的Pt. 通过透射电子显微镜(TEM), 循环伏安(CV)等方法对所制备的Pt/Au/Si 催化剂进行了形貌及电化学性能的表征. 结果表明, 该单层Pt 覆盖的Au/Si 催化剂对于甲醇的质量电催化活性是商业E-TEK(Pt/C)的8 倍,相比于不同层数的Pt, 单层覆盖时Pt 的利用率最高, 该单层Pt 负载Au/Si 催化剂对于抑制CO 的中毒的性能也比商业E-TEK(Pt/C)有明显的提高.     

Ag活化的p型硅(111)表面化学镀Ag膜表面形貌研究

A method of electroless silver deposition on silver activated p-type silicon（111） wafer was proposed. The silver seed layer was deposited firstly on the wafer in the solution of 0.005 mol/L AgNO3 ＋0.06 mol/L HE Then the silver film was electrolessly deposited on the seed layer in the electroless bath of AgNO3＋NH3＋acetic acid＋NH2NH2 （pH 10.2）. The morphology of the seed layer and the silver films prepared under the condition of the different bath composition was compared by atomic force microscopy. The reflectance of the silver films with different thickness was characterized by Fourier transform infrared spectrometry. The experimental results indicate that the seed layer possesses excellent catalytic activity toward electroless silver deposition and rotating of the silicon wafer during the electroless silver deposition could lead to formation of the smoother silver film.