异长春花苷内酰胺的光化学降解

报道了异长春花苷内酰胺在水溶液中经自然光照射后, 发生光氧化反应, 主要降解产物为(3S)-短小蛇根草苷. 采用通入氧气和日光灯照射的方法可加速异长春花苷内酰胺光降解, (3S)-短小蛇根草苷的产率为56%.     

基于倾向值匹配的干扰数据检测方法

数据中掺杂干扰数据的现象十分常见,对于随机出现的干扰数据处理,目前已有很多方法可以借鉴,但对于人为的干扰数据,若继续使用传统方法,则可能不会达到很好的效果.倾向值可以用一维数值来描述多维数据的特征,且当数据具有相近的倾向值时,其本身常常也很相似,并可能来自同一总体.因此,文章提出一种应用倾向值匹配检测干扰数据的新方法,...     

关于Neyman-Pearson基本引理的几个注记

本文探讨了Neyman-Pearson基本引理.通过论证总体参数θ只有θ₀或θ₁两种可能时最优检验功效函数的唯一性,得到了两种假设T₁:θ=θ₀←→θ=θ₁和T₂:θ=θ₁←→θ=θ₀各自对应最优检验的两类错误概率可以互换的结论.     

STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD

The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin² ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (T_s). The effective stress in the films calculated by the effective stress model increased with the increase of T_s. Furthermore, the dependence of effective stress in the films on T_s was also investigated.     

STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD

The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin² ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (T_s). The effective stress in the films calculated by the effective stress model increased with the increase of T_s. Furthermore, the dependence of effective stress in the films on T_s was also investigated.