C-terminal processing of yeast Spt7 occurs in the absence of functional SAGA complex

Background  

Spt7 is an integral component of the multi-subunit SAGA complex that is required for the expression of ~10% of yeast genes. Two forms of Spt7 have been identified, the second of which is truncated at its C-terminus and found in the SAGA-like (SLIK) complex.     

Oxidation of 4H-SiC covered with a SmSix surface alloy

Oxidation of Sm/4H-SiC is studied by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). In particular, we report kinetic information from the oxidation of a SmSi_x (1 × 1) surface alloy formed on (0 0 0 1) 4H-SiC. During the initial oxidation of the SmSi_x alloy, a (2 × 2)-LEED pattern is observed. Furthermore, the Sm 2+ valency observed from the clean SmSi_x surface alloy, which is related to surface samarium atoms, disappear at 15 L oxygen exposure. The oxygen atom is consequently deduced to be located at bridge or hollow sites involving one Sm atom. The initial oxidation result in an oxygen deficit SmSiO_x interface oxide, probably as a consequence of the high oxidation temperatures in this work (900-1050 °C). We report that in a prolonged oxidation (longer than 10 kL) a SiO₂ layer forms on top of the samarium silicon oxide interface layer.     

Single fiber model of particle retention in an acoustically driven porous mesh

A method for the capture of small particles (tens of microns in diameter) from a continuously flowing suspension has recently been reported. This technique relies on a standing acoustic wave resonating in a rectangular chamber filled with a high-porosity mesh. Particles are retained in this chamber via a complex interaction between the acoustic field and the porous mesh. Although the mesh has a pore size two orders of magnitude larger than the particle diameter, collection efficiencies of 90% have been measured. A mathematical model has been developed to understand the experimentally observed phenomena and to be able to predict filtration performance. By examining a small region (a single fiber) of the porous mesh, the model has duplicated several experimental events such as the focusing of particles near an element of the mesh and the levitation of particles within pores. The single-fiber analysis forms the basis of modeling the overall performance of the particle filtration system.     

Carrier concentration and shallow electron states in In-doped hydrothermally grown ZnO

Single-crystal ZnO has been hydrothermally grown with additional In₂O₃ in the solution. Schottky barrier contacts have been deposited by electron beam evaporation of Pd onto the face. Capacitance–voltage measurements have been performed to reveal the carrier concentration as a function of the In₂O₃ content in the solution, and secondary-ion mass spectrometry was used to measure the resulting In concentration in the samples. For an In₂O₃ content of 2×10¹⁹ cm⁻³, the average free electron concentration increased to 5×10¹⁸ cm⁻³ compared to 4×10¹⁷ cm⁻³ for the non-doped material. An increase of the In₂O₃ content to 4×10¹⁹ cm⁻³ leads to a measured carrier concentration of approximately 1×10¹⁹ cm⁻³; however, only up to a quarter of the incorporated In became electrically active. From thermal admittance spectroscopy measurements two prominent electronic levels are found, and compared with to the non-doped material case, the freeze-out of the shallow doping in the In-doped samples takes place at lower temperatures (below 80 K).     

Conductivity increase of ZnO:Ga films by rapid thermal annealing

Due to a constant increase in demands for transparent electronic devices the search for alternative transparent conducting oxides (TCO) is a major field of research now. New materials should be low-cost and have comparable or better optical and electrical characteristics in comparison to ITO. The use of n-type ZnO was proposed many years ago, but until now the best n-type dopant and its optimal concentration is still under discussion. Ga was proposed as the best dopant for ZnO due to similar atomic radius of Ga³⁺ compared to Zn²⁺ and its lower reactivity with oxygen. The resistivity ρ of ZnO:Ga/Si (100) films grown by PEMOCVD was found to be 3×10⁻² Ω cm. Rapid thermal annealing (RTA) was applied to increase the conductivity of ZnO:Ga (1 wt%) films and the optimal regime was determined to be 800  C in oxygen media for 35 s. The resistivity ratio before and after the annealing and the corresponding surface morphologies were investigated. The resistivity reduction () was observed after annealing at optimal regime and the final film resistivity was approximately ≈4×10⁻⁴ Ω cm, due to effective Ga dopant activation. The route mean square roughness (R_q) of the films was found to decrease with increasing annealing time and the grain size has been found to increase slightly for all annealed samples. These results allow us to prove that highly conductive ZnO films can be obtained by simple post-growth RTA in oxygen using only 1% of Ga precursor in the precursor mix.     

Carrier concentration and shallow electron states in Sb-doped hydrothermally grown ZnO

In order to obtain p-type ZnO, the incorporation of group-V elements on oxygen sites has received lots of attention. Recently, the implantation of Sb+ ions into ZnO has been shown to lead to reduced n-type conduction. However, a compensating effect due to implantation damage could not be ruled out. Therefore, single-crystal ZnO has been hydrothermally grown with additional Sb₂O₃, Sb₂O₅, and K(SbO)C₄H₄O₆ in the solution. Schottky barrier contacts have been deposited onto the () face. Capacitance–voltage measurements and thermal admittance spectroscopy have been used for electrical characterization, and secondary ion mass spectrometry was used to measure the Sb content in the samples. Clearly, all samples exhibited n-type conduction. A competition between the incorporation of oxygen and antimony is suggested.     

Strong Coulomb correlation effects in ZnO

The electronic structure, band parameters, and optical spectra of wurtzite-type ZnO were studied by first-principles calculations within different approximations of the density functional theory. The local-density approximation underestimates the band gap, the energy levels of the Zn-3d states, the band dispersion, the crystal-field splitting, the spin-orbit interaction, and location of peaks in the optical spectra. The generalized-gradient approximation slightly corrects the discrepancies with the experimental findings and it shows good agreement for the optical spectra with experimental data at energies 10-20 eV for E⊥c. Studies within the local-density approximation with the multiorbital mean-field Hubbard potential show that strong Coulomb correlations are in operation. From effective mass calculations it is found that holes are much heavier and more anisotropic than the conduction-band electrons in ZnO.