ZnCoO稀磁半导体的室温磁性

采用固相反应法，将ZnO和Co₂O₃粉末按不同的成分配比混合，制备了稀磁半导体Zn_1-xCo_xO (x=0.02,0.06,0.10)材料.并使用H₂气氛退火技术对样品进行了处理，得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词： 稀磁半导体 氧化锌 掺杂 固相反应法     

Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics

Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.     

镍的锗化物与锗肖特基接触的工艺与特性

本文利用在n型Ge衬底上溅射金属Ni，然后在不同温度下氮气中退火的方法制备了Ni的锗化物肖特基二极管。X射线衍射（XRD）分析表明在Ge衬底上形成了一层Ni的锗化物。研究了退火温度对Ni的锗化物肖特基二极管电学特性的影响。实验结果表明具有典型I-V整流特性的肖特基二极管被获得，在300oC中退火的肖特基二极管的开关比最高。通过C-V方法提取了肖特基二极管的肖特基势垒高度。     

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.