Effects of BaCu（B2O5 ） addition on sintering temperature and microwave dielectric properties of Ba5Nb4O15–BaWO4 ceramics

The effects of BaCu(B2O5)(BCB) addition on the microstructure, phase formation, and microwave dielectric properties of Ba5Nb4O15–BaWO4ceramic are investigated. As a sintering aid, BaCu(B2O5) ceramic could effectively lower the sintering temperature of Ba5Nb4O15–BaWO4ceramic from 1100?C to 950?C due to the liquid-phase effect. Meanwhile,BaCu(B2O5) addition effectively improves the densification of Ba5Nb4O15–BaWO4ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that Ba5Nb4O15and BaWO4coexist with no crystal phase of BaCu(B2O5) in the sintered ceramics. The Ba5Nb4O15–BaWO4ceramics with 1.0 wt% BaCu(B2O5) sintered at 950?C for 2 h presents good microwave dielectric properties of εr = 19.0, high Q × f of 33802 GHz and low τfof2.5 ppm/?C.     

Cu2+离子A位取代对MgTiO3陶瓷结构及介电性能的影响

采用固相反应制备了Mg_1-xCu_xTiO₃(0.00≤x≤0.20)微波介电陶瓷,研究CuO烧结助剂对MgTiO₃陶瓷的微观结构和微波介电性能的影响。实验结果表明,CuO中的Cu²⁺离子会进入到MgTiO₃晶格中并取代Mg²⁺,形成Mg_1-xCu_xTiO₃固溶体。由于液相效应,适量的CuO可以促进MgTiO₃陶瓷的致密化烧结,降低其烧结温度。Cu²⁺离子的A位取代会改变样品的TiO₆八面体扭曲度。随着Cu²⁺离子含量的增加,会使MgTiO₃陶瓷的结构稳定性降低。随着CuO含量的增加,晶粒的不均匀生长和液相的出现导致样品的品质因数(Qf)下降。同时,Mg_1-xCu_xTiO₃陶瓷的相对密度、结构稳定性和平均共价度的降低也会恶化陶瓷的Qf值。样品的介电常数(ε_r)与离子极化率、杂相和TiO₆八面体扭曲度相关。样品的谐振频率温度系数(τ_f)随TiO₆八面体扭曲度的增加而减小。当x=0.08时,样品可在1 150℃实现致密化烧结,且τ_f值改善至-3.4×10^-5℃^-1。     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

Effects of BaCu（B2Os） addition on sintering temperature and microwave dielectric properties of BasNb4O15-BaWO4 ceramics

The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.     

The low-temperature sintering and microwave dielectric properties of （Zno.7Mgo.3） TiO3 ceramics with H3BO3

The effects of the addition of H3BO3 on the microstructure, phase formation, and microwave dielectric properties of （Zn0.TMg0.3）TiO3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H3BO3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H3BO3. With the increase in H3BO3 content, the dielectric constant （er） monotonically increases, but the quality factor （Q x f） reaches a maximum at 1 wt% H3BO3, and the apparent density of ZMT ceramics with H3BO3〉 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H3BO3 exhibit excellent microwave dielectric properties： er = 19.8, and Q x f -- 43800 GHz （8.94 GHz）.     

Development and application of ferrite materials for low temperature co-fired ceramic technology

Development and application of ferrite materials for low temperature co-fired ceramic(LTCC)technology are discussed,specifically addressing several typical ferrite materials such as M-type barium ferrite,NiCuZn ferrite,YIG ferrite,and lithium ferrite.In order to permit co-firing with a silver internal electrode in LTCC process,the sintering temperature of ferrite materials should be less than 950°C.These ferrite materials are research focuses and are applied in many ways in electronics.     

The low-temperature sintering and microwave dielectric properties of (Zn_(0.7)Mg_(0.3))TiO_3 ceramics with H_3BO_3

The effects of the addition of H 3 BO 3 on the microstructure, phase formation, and microwave dielectric properties of (Zn 0.7 Mg 0.3 )TiO 3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H 3 BO 3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃ due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H 3 BO 3 . With the increase in H 3 BO 3 content, the dielectric constant (ε r ) monotonically increases, but the quality factor (Q × f ) reaches a maximum at 1 wt% H 3 BO 3 , and the apparent density of ZMT ceramics with H 3 BO 3 ≥ 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H 3 BO 3 exhibit excellent microwave dielectric properties: ε r = 19.8, and Q × f = 43800 GHz (8.94 GHz).     

Influences of Bi2O3/V2O5 Additives on the Microstructure and Magnetic Properties of Lithium Ferrite

Lithium ferrite materials with different concentrations of Bi2O3 and V2O5 additives are prepared by the conventional ceramic technique. The x-ray diffraction analysis proves that the additives do not affect the final crystal phase of the lithium ferrite in our testing range. Both Bi2O3 and V2O5 additives could promote densification and lower sintering temperature of the lithium ferrite. The average grain size first increases, and then gradually decreases with the Bi2O3 content. The maximal grain size appears with 0.25 wt% Bi2O3. The average grain size first increases, and then is kept almost unchanged with the V2O5 content. The maximal average grain size of the samples with V2O5 additive is much smaller than that of the samples with Bi2O3 additive. Furthermore, the V2O5 additive more easily enters the crystal lattice of the lithium ferrite than the Bi2O3 additive. These characteristics evidently affect the magnetic properties, such as saturation flux density, ratio of remanence Br to saturation flux density Bs, and coercive force of the lithium ferrite. The mechanisms involved are discussed.     

Origin of Room-Temperature Ferromagnetism for Cobalt-Doped ZnO Diluted Magnetic Semiconductor

The pure single phase of Zn0.95 Co0.05 O bulks is successfully prepared by solid-state reaction method. The effects of annealing atmosphere on room-temperature ferromagnetic behaviour for the Zn0.95 Co0.05 O bulks are investigated. The results show that the air-annealed samples has similar weak ferromagnetic behaviour with the as-sintered samples, but the obvious ferromagnetic behaviour is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms = 0.73μg/Co and coercivity Hc = 233.8 Oe are obtained for the Ar/H2 annealed samples with pure single phase structure. The enhanced room-temperature ferromagnetic behaviour is also found in the samples with high carrier concentration controlled by doping interstitials Zn （Zni）.