Effects of BaCu（B2Os） addition on sintering temperature and microwave dielectric properties of BasNb4O15-BaWO4 ceramics

The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.     

凝胶浇注制备La0.8Sr0.2Cr0.5Fe0.5O3-δ-Zr0.84Y0.16O1.92非对称陶瓷透氧膜

要凝胶浇注制备多孔支撑体,并采用浆料涂膜和高温共烧技术制备非对称La_0.8Sr_0.2Cr_0.5Fe_0.5O_3-δ-Zr_0.84Y_0.16O_1.92（LSCF-YSZ）双相复合陶瓷透氧膜。结果显示,采用凝胶浇注制备技术,可获得结构均匀和高孔隙率的多孔支撑体;在多孔支撑体上,采用浆料涂膜和高温共烧技术制备的LSCF-YSZ非对称管状透氧膜,Air/He梯度下,950℃,氧渗透速率达到1.17×10^-8mol·cm^-2·s^-1;在850—950℃温度范围,膜的氧渗透表观活化能为163.7±0.4kJ/mol。     

Phase evolution and microwave dielectric properties of Bi3SbO7 ceramic

The Bi₃SbO₇ ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase α-Bi₃SbO₇ was formed at about 890 °C and it started to transform to high temperature phase β-Bi₃SbO₇ at about 960 °C. Microwave dielectric constants of α-Bi₃SbO₇ ceramic and β-Bi₃SbO₇ ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of α-Bi₃SbO₇ ceramic was near zero and TCF of β-Bi₃SbO₇ ceramic was about −120 ppm/°C. The Bi₃SbO₇ ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition.     

Cold processing of green state LTCC with a CO2 laser

We report a novel “cold” self-cleaning technique for processing low temperature co-fired ceramic (LTCC) in the “green” state at high resolution and high speed, using a low power carbon dioxide laser. A particle ejection process involving both the ceramic grains and the organic binder produces material removal rates of >100 μm per pulse with lateral processing resolution of 50 μm and depth resolution comparable to ceramic grain size with no heat-effected zone or other deleterious thermal effects. The process has been used to drill microvias and to machine arbitrary shapes with high resolution. PACS 79.20.Ds; 42.62.Cf; 42.55.Lt; 81.20.Wk     

BROAD-BAND VERTICAL INTERCONNECT BETWEEN MULTILAYER MODULES USING DOUBLE CURRENT PROBES

A novel vertical interconnect scheme between highly integrated multilayer low temperature co-fired ceramic (LTCC) modules has been proposed in this paper. Substrate integrated waveguide (SIW) is manufactured in LTCC substrate and microwave solder-less connector based on the fuzz button technology is used to realize reliable and effective interconnection. The proposed scheme makes use of double current probes to transfer energy between two substrates. Two forms of this interconnect are demonstrated, and simulated bandwidth more than 30% by using 15dB return-loss reference, insertion loss is less than 0.5dB over the passband.     

CuO added Pb_(0.92)Sr_(0.06)Ba_(0.02)(Mg_(1/3)Nb_(2/3))_(0.25)(Ti_(0.53)Zr_(0.47))_(0.75)O_3 ceramics sintered with Ag electrodes at 900℃ for multilayer piezoelectric actuator

CuO added Pb_(0.92)Sr_(0.06)Ba_(0.02)(Mg_(1/3)Nb_(2/3))_(0.25)(Ti_(0.53)Zr_(0.47))_(0.75)O_3 ceramics were studied to prepare high-quality multilayer piezoelectric actuators with pure Ag electrodes at 900℃. Cu O addition not only reduced the sintering temperature significantly from 1260℃ to 900℃ but also improved the ceramic density to 7.742 g/cm~3. The 0.7 wt.% Cu O added ceramic sintered at 900℃ shows the remnant polarization(P_r) of 40 μC/cm~2, 0.28% strain at 40 kV/cm, and the piezoelectric coefficient(d_(33)) of 630 pC/N. This ceramic shows a strong relaxor characteristic with a Curie temperature of 200℃. Furthermore, the 0.7 wt.% CuO added ceramic and pure Ag electrodes were co-fired at 900℃ to prepare a high-quality multilayer piezoelectric actuator with a d_(33) of over 450 pC/N per ceramic layer.     

低温共烧陶瓷铁氧体环行器的设计与分析

基于叠层片式化结构对工作于S波段的低温共烧陶瓷(LTCC)铁氧体环行器进行设计和分析,模拟研究了器件制备中面临的关键问题对器件频率特性的影响。研究结果表明,采用微波铁氧体层与陶瓷介质层构成混合结构,匹配电路以三维方式进行布线和互联,器件可以获得优良的带内特性。在器件的三维电路布线中,当连接两节阻抗线的导体圆柱端口气隙高度达到20μm时,器件的传输特性和隔离特性急剧恶化。此外,研究还发现微波铁氧体层与陶瓷介质层出现分层时,形成的气隙高度不应大于20μm,否则将导致器件的传输特性和隔离特性显著降低。因此,在进行LTCC铁氧体环行器的制备时,导体圆柱与陶瓷介质层以及微波铁氧体层与陶瓷介质层的异质材料匹配共烧是保障器件优良性能的关键。     

Two crucial factors influencing quality of GaAs on Ge substrate

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.     

Preparation,Structure, and Dielectric and Magnetic Properties of SrFe<Subscript>2/3</Subscript>W<Subscript>1/3</Subscript>O<Subscript>3</Subscript> Ceramics

Polycrystalline samples of SrFe_2/3W_1/3O₃ (SFWO) ceramic were obtained by solid-phase reactions with subsequent sintering using conventional ceramic technology. X-ray diffraction analysis showed that at room temperature, the SFWO ceramic is single-phase and has a perovskite-type structure with tetragonal symmetry and parameters a = 3.941(9) Å, c = 3.955(6) Å, and c/a = 1.0035. In studying the magnetic properties and the Mössbauer effect in SFWO ceramics, it is found that the material is a ferrimagnet, and the iron ions are only in the valence state of Fe³⁺. It is suggested that in the temperature range of T = 150–210°C, a smeared phase transition from a cubic (paraelectric) phase to a tetragonal (ferroelectric) phase takes place in SFWO with decreasing temperature.     

Analysis of Multilayered Millimeter Wave Structure with Via-Holes Connected

An effective technique to characterize multilayered millimeter wave structure with vertical via-holes connected is presented. The advantage of this method is the closed-form Greens functions in spatial domain for general electric and magnetic sources in multilayered medium are obtained easily in terms of the two-level discrete complex image method (DCIM) with the high-order Sommerfeld identities, which only four elements of Greens functions in spectral domain are needed. In addition, the curl operators in mixed potential integral equations (MPIE) are avoided effectively from the Greens functions in this paper. A low temperature co-fired ceramic (LTCC) aperture coupled antenna with vertical via-holes connected is analyzed to prove the accuracy and efficiency of this technique on three-dimensional (3-D) multilayered structure with vertical components.     

Release of charges under external fields of PbLa（Zr,Sn,Ti）03 ceramic＊

This paper investigates the pyroelectric of poled antiferroelectric （AFE） ceramic Pbo.97Lao.02 （Zro.69Sno.196 Ti0.114）03 and its remnant polarization dependence of hydrostatic pressure. The results show that the bound charges of poled sample can be released in short time by temperature field or pressure field. The released charge abruptly forms a large pulse current. The phenomena of released charge under external fields result in the ferroelectric-AFE phase transition induced by temperature or hydrostatic pressure.     

Ce3+,Tb3+共掺BaYF5微晶玻璃的光学特性

采用高温熔融法制备了一种新型的Ce3 +/Tb3+共掺BaYF5微晶玻璃.测试了微晶玻璃的X射线衍射图(XRD)谱、激发光普和发射光谱.研究发现:660℃热处理2h后的玻璃基质中析出BaYF5纳米晶相,根据XRD结果用Scherrer公式计算得到晶粒大小约为27 nm;在近紫外光(338 nm)激发下,观察到BaYF5...     

Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

Low temperature fired Ni-Cu-Zn ferrite with Bi4Ti3O12

The Ni-Cu-Zn ferrites with different contents of Bi₄Ti₃O₁₂ ceramics (1-8 wt%) as sintering additives were prepared by the usual ceramic technology and sintered at 900 °C to adapt to the low temperature co-fired ceramic (LTCC) technology. The magnetic and dielectric properties of the ferrite can be effectively improved with the effect of an appropriate amount of Bi₄Ti₃O₁₂. For all samples, the ferrite sintered with 2 wt% Bi₄Ti₃O₁₂ has relatively high density (98.8%) and permeability, while the ferrite with 8 wt% Bi₄Ti₃O₁₂ has relatively good dielectric properties in a wide frequency range. The influences of Bi₄Ti₃O₁₂ addition on microstructure, magnetic and dielectric properties of the ferrite have been discussed.     

Low-temperature sintering and electromagnetic properties of ferroelectric-ferromagnetic composites

Ferroelectric-ferromagnetic composites were prepared by the usual ceramic technology combined with the sol-gel method and sintered at 900 °C to adapt to the low-temperature co-fired ceramic (LTCC) technology. The ferroelectric ceramics in reasonable amounts can effectively decrease the RF loss, dielectric loss and increase the saturation magnetization. Variations of permeability, dielectric constant and loss tangent with the frequency in the range of 1 MHz-1.8 GHz have been discussed. The microstructures of the sintered ceramics were analyzed by scanning electron microscope (SEM). The influences of different composition on the electromagnetic properties of the composites have been investigated.     

多孔钛酸钡陶瓷制备及其增强的压电灵敏性

在压电陶瓷中增加孔洞数量,可以有效改善陶瓷的静水压优值,提高其压电灵敏性.考虑到铅基压电陶瓷对环境和人体的危害,本文以糊精为造孔剂,采用传统固相烧结法制备无铅钛酸钡(BaTiO_3)多孔压电陶瓷.研究烧结温度(1250,1280,1300℃)和糊精含量(5%,10%,15%)对BaTiO_3陶瓷晶体结构、孔隙率以及孔形貌特征的影响,探索孔隙率与BaTiO_3陶瓷介电、压电、声阻抗以及静水压优值等性能之间的相关性.结果表明:所有多孔陶瓷表现出三维贯通的开气孔,尺寸约为1—7μm.烧结温度强烈影响BaTiO_3陶瓷的孔隙率,加入10%低沸点的糊精时,1250℃和1280℃烧结均获得孔隙率高达58%的多孔BaTiO_3陶瓷;然而1300℃烧结,陶瓷孔隙率急速下降到13%.1250℃烧结10%糊精含量的陶瓷表现出高的静水压优值(约8376×10~/(-15)Pa~(-1))和低的声阻抗(约2.84MRrayls(1Rayl=10Pa·s/m)).与1250℃相比,1280℃烧结的陶瓷晶粒之间的结合力明显增强,有利于提高陶瓷的力学强度.这些优异的性能预示着多孔钛酸钡陶瓷在传感器和水听器领域有着潜在的应用前景.     

低温燃烧合成法制备的氧化铝陶瓷粉体的发光特性

α-Al₂O₃∶C单晶具有优良的热释光特性,被用做热释光剂量计,但α-Al₂O₃∶C晶体剂量计的形状不易加工,生产成本高且碳在晶体中难以掺杂均匀。采用低温燃烧合成法以无水乙醇为溶剂,尿素为染料,硝酸铝为反应物制备少团簇、分散均匀的片状α-Al₂O₃∶C陶瓷粉体。探讨不同点火温度和不同退火温度对其光致发光特性的影响,不同退火温度对热释光特性的影响以及热释光与辐射剂量(90Sr β)的关系。通过分析α-Al₂O₃∶C陶瓷粉体的光致发光光谱得出：α-Al₂O₃∶C陶瓷粉体的发射波长在395 nm附近,点火温度T≤800℃时,点火温度为500 ℃制备的α-Al₂O₃∶C陶瓷粉体的光致发光强度最强;在相同点火温度T=500 ℃下,经不同温度退火制备α-Al₂O₃∶C陶瓷粉体,点火温度为500 ℃制备的α-Al₂O₃∶C陶瓷粉体经1 000 ℃退火后光致发光强度最强。通过分析α-Al₂O₃∶C陶瓷粉体的热释光曲线得出：退火后的α-Al₂O₃∶C陶瓷粉体在200 ℃左右的热释光峰值占主导,900 ℃退火的α-Al₂O₃∶C陶瓷粉体在200 ℃附近的热释光峰值最强;通过峰高法对900 ℃高温退火处理后的α-Al₂O₃∶C陶瓷粉体位于200 ℃左右的热释光峰做剂量响应曲线,可以看出,在1～50 Gy剂量范围内具有良好的热释光剂量线性响应关系,在50～200 Gy剂量范围内出现超线性响应关系。与α-Al₂O₃∶C晶体(1～10 Gy)和多孔Al₂O₃∶C薄膜(1～10 Gy)相比,α-Al₂O₃∶C陶瓷粉体的线性剂量响应范围明显扩大。此研究可为提高氧化铝陶瓷粉体的热释光性能提供思路。     

Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

In this study, the influence of the crystal orientation on the electrical properties of sputter deposited aluminium nitride (AlN) thin films on low temperature co-fired ceramics (LTCC) substrates is investigated. The degree of c-axis orientation can be tailored by the deposition conditions such as plasma power, gas pressure and gas composition in the deposition chamber. Due to the large surface roughness of LTCC substrates (R_a = ∼0.4 μm) the quality of thin films is lower compared to silicon. Between areas of columnar grains arranged perpendicular to the LTCC surface, defects like voids are generated due to the wavy surface characteristics. The impact of crystal orientation and temperature up to 400 °C on the electrical performance is evaluated, as these layers are targeted as potential candidates for dielectric heat spreaders on multilayered ceramic substrates for high frequency applications. These AlN thin films having a good c-axis orientation exhibit lower leakage current levels over the complete temperature range compared to those with a poor alignment with respect to this crystallographic plane. The leakage current behaviour, however, is dominated according to the Pool-Frenkel electron emission independent of the degree of c-axis orientation.     

The static and hyper-frequency magnetic properties of a ferromagnetic-ferroelectric composite

This paper reports the static and hyper-frequency magnetic properties, as well as their relationship with microstructure, of the ferromagnetic-ferroelectric co-fired composite ceramic, (1−x)Ba₂Zn_1.2Cu_0.8Fe₁₂O₂₂-xPb(Ni_1/3Nb_2/3)_0.8Ti_0.2O₃. The X-ray diffraction results did not detect any other phase in the co-fired ceramics, but found a crystal structural distortion of ferrite phase. Scanning electron microscopy photos showed that two phases’ grains matched well and stacked compactly and the hexagonal ferrite changed its grain morphology. The saturation magnetization increased with the reduction of magnetic phase in the range of 0<x<0.65 because of the stress-induced structural distortion. The permeability decreases monotonically with the reduction of magnetic phase in the whole composition range.     

阻挡层电容对ACu3Ti4O12巨介电性能的影响研究

用固相反应法成功地制备了ACu3Ti4O12(A=Ca，La，Y)系列陶瓷，在50—300K温区内测量了样品的介电性能，分析了交流电导与外场频率、温度的关系.发现在相同组分的CaCu3Ti4O12晶体中相对含量大于等于0776时，样品的相对介电常数可达104；而A位上价态为3+的化合物La2/3Cu3Ti4O12和Y2/3Cu3Ti4O12相对介电常数仅为103.分析表明，样品中内部阻挡层电容数目的多少直接对ACu3Ti4O12的相对介电常数产生影响.电导与温度及频率的关系是由电子、声子与外场的共同作用决定的. 关键词： ACu3Ti4O12 巨介电 晶相含量 阻挡层电容