2-甲基-1,4-萘醌的绿色合成方法

以2-甲基萘(2-MN)为原料、H₂O₂为氧化剂,经不同酸(硫酸、氢溴酸、三氟乙酸等)催化合成2-甲基-1,4-萘醌(2-MNQ),其结构经¹H NMR和¹³C NMR确证,其纯度经HPLC检测。对反应条件进行了优化。最佳反应条件为：20 eq. CH₃COOH为溶剂,6 eq. H₂O₂为氧化剂,在10%mol H₂SO₄催化下,于75 ℃反应,2-MNQ纯度95%,收率67%。     

Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs

The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width ($L_{\rm sp})$ and silicon film thickness $(t_{\rm si})$ are two independent parameters that influence the speed and static power dissipation of UTB silicon-on-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of $t_{\rm si}$ and $L_{\rm sp}$ for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.     

Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation

In this paper, a method to fabricate Silicon-on-Nothing (SON) MOSFETs using H$^{ + }$ and He$^{ + }$ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.