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纳米载药脂质体的物理化学稳定性,是其实际应用中的关键问题。文章采用薄膜旋转蒸发法-超声法制备了白藜芦醇纳米脂质体(RES-Lip),采用透射电子显微镜观察其微观形貌,并考察RES-Lip的物理化学稳定性。通过电导法测定了RES-Lip的相变温度(Tm),及其在凝聚过程的凝聚速率常数(Kco)和表观活化能(Eco);采用动态透析-紫外分光光度法,研究了温度和pH对RES-Lip降解的影响。结果表明,RES-Lip为球形囊泡结构,粒径小于100 nm;RES-Lip的相变温度为64℃;凝聚速率常数Kco随体系温度升高而升高;表观活化能Eco为86.056 kJ/mol;RES-Lip的降解符合一级动力学模型,降解的表观活化能Ea为59.3157 kJ/mol,降解过程是吸热、自发、熵增过程。本实验制备得到的RES-Lip在4℃、pH=7.40的条件下储存,稳定性较好。 相似文献
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本文采用传统固相反应法,成功制备了新型无铅弛豫铁电陶瓷(1-x)[0.9BaTiO3-0.1Bi(Mg0.25Ta0.5)O3]-xBi0.5Na0.5TiO3。结果表明,较高居里温度的Bi0.5Na0.5TiO3的引入,使得材料体系中建立了更多的以Bi—O耦合为主的极性纳米区域,弥补了因Bi(Mg0.25Ta0.5)O3的加入导致的宏观极化强度的减少,提高了材料的饱和极化强度,实现了较高储能密度的同时具有更好的温度稳定性。在245 kV/cm电场强度下,x=0.2样品的储能密度约为4.01 J/cm3,储能效率约为84.86%,同时该组分在20~170 ℃储能密度的变化率小于5%,储能效率的变化率小于6%,表现出优异的温度稳定性。 相似文献
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纳米碳纤维可用在催化材料、储氢材料、及纳米电子器件等方面。本文对用泡沫镍及负载型镍催化剂催化分解乙烯或丙烯制备纳米碳纤维进行了研究。利用X射线衍射仪、物理吸附仪、扫描电镜进行了分析表征,并考察了催化剂、碳源、生长温度对纳米碳纤维生长量、形貌、结构的影响。结果表明:在生长温度450℃,乙烯流率30mL/m in的条件下,负载型镍催化剂纳米碳纤维的生长量要高出泡沫镍3~6倍,负载型镍催化剂制备的纳米碳纤维直径为40~60纳米,小于泡沫镍的情况。泡沫镍催化分解乙烯制备纳米碳纤维时,纳米碳纤维的生长量和平均直径随温度的降低而逐渐减小。纳米碳纤维在泡沫镍上的最低生长温度为420℃,在低于480℃生长纳米碳纤维时泡沫镍的骨架结构不会被破坏,由此制备的纳米碳纤维在新型结构催化材料中有很好的的应用前景。 相似文献
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小分子亲水有机溶剂液-液萃取技术在分析化学中的应用进展 总被引:3,自引:0,他引:3
介绍了小分子亲水有机溶剂液-液萃取技术的基本原理、影响因素并对小分子亲水有机溶剂液-液萃取技术的发展前景进行了展望,引用文献20篇. 相似文献
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水样中痕量的强力霉素(DXCC)用正丙醇及无水乙醇(4+1)作混合溶剂,从pH 8的溶液中进行气浮浮选使之分离并富集.加入氯化钠作为分相剂,加入铁(HI)使与DXCC反应生成憎水的络合物而浮选入有机相,在383 am波长处测定有机相的吸光度.吸光度与DXCC浓度在3.1×10-7~2.0×10-5mol·L-1范围内呈线性关系,方法的检出限(3S/N)为2.6×10-7mol·L-1,测定中采用自制的气浮浮选装置.应用所提出的方法分析了3种不同来源的水样,并以此样品作为基体用标准加入法对方法的回收率进行了测定,测得方法的平均回收率为99.7%,测定值的相对标准偏差(n=5)均小于2.5%. 相似文献
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Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry 下载免费PDF全文
In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010. 相似文献