铯掺杂提升反梯度结构二维(CMA)2MA8Pb9I28钙钛矿薄膜及太阳电池的性能

相对于3D钙钛矿材料,二维(2D)有机-无机杂化钙钛矿材料具有更好的稳定性.然而由于载流子输运性差, 2D钙钛矿太阳电池效率较低.为了提高2D钙钛矿太阳电池的效率,制备了铯掺杂的具有反梯度结构的二维(CMA)₂MA₈Pb₉I₂₈薄膜.研究结果发现:CsI掺杂能够改善(CMA)₂MA₈Pb₉I₂₈薄膜的形貌、增加晶粒尺寸、降低缺陷态密度,并且提高了(CMA)₂MA₈Pb₉I₂₈钙钛矿薄膜的热稳定性.最后, CsI掺杂浓度为10%时制备(CMA)₂MA₈Pb₉I₂₈钙钛矿太阳电池效率最高,达到了14.67%,相对于未掺杂的电池效率(10.06%)提高了45.8%.     

钾钨青铜K_xWO_3的晶体结构和电输运特性研究

以K2WO4、WO3和W粉为原料,用混合微波方法制备了钾钨青铜KxWO3样品.随着名义钾含量x的增加,KxWO3样品的晶体结构由六方(0.20≤x≤0.33)转变为四方(0.50≤x≤0.60).四方相样品均显示金属型导电特性.在六方相样品K0.2WO3中观测到了明显的电荷密度波(CDW)转变,转变温度为265K,其余六方相样品则为半导体型导电特性.在x=0.20不变的条件下,以Ca部分替代K制备了(K1-2 yCay)0.2WO3(名义钙含量y=0.1,0.2,0.3)样品,其主相仍为六方相.当0y≤0.2时,六方相的晶胞参数a和c随y的增加而增大.从电阻率-温度曲线上可以看出,名义钙含量的变化会影响样品中的CDW转变.     

YBa_2Cu_3O_(7-x)对氧的检测灵敏度和响应速度

研究了高温超导体 YBa2 Cu3O7- x块材和厚膜在温度区间 40 0℃到 85 0℃电阻率随环境氧分压的变化关系 ,初步探索了其作为氧传感器材料的可能性。并研究了 YBa2 Cu3O7- x在不同温度条件下对氧的检测灵敏度和响应速度。实验表明 YBa2 Cu3O7- x对氧有较强的选择性 ,同一温度下电阻率随氧分压的增大而减小 ,且有较快的响应速度。氧分压减小时电阻率增大 ,块材响应速度较慢 ,但是制成厚膜后可提高其响应速度     

沉积速率对甚高频等离子体增强化学气相沉积制备微晶硅薄膜生长标度行为的影响

本文采用甚高频等离子体增强化学气相沉积技术制备了沉积速率系列不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明:沉积速率为0.08和0.24nm/s的低速沉积时,硅薄膜表面粗糙度接近,生长指数分别为β=0.21和β=0.20,对应有限扩散生长模式,此时沉积速率对硅薄膜生长影响不大,原因是低速沉积时成膜先驱物有足够时间迁移到能量低的位置;当沉积速率增加到0.66nm/s时,硅薄膜表面粗糙度明显增加,生长指数β=0.81,大于0.5,出现了异常标度行为,与低速沉积的生长模式明显不同,原因是高速沉积时成膜前驱物来不及扩散就被下一层前驱物覆盖,降低了成膜前驱物在薄膜表面的扩散,使表面粗糙度增加和生长指数β增大.β大于0.5的异常标度行为与阴影效应有关.     

Magnetism of Zr atomic wires

By using the full-potential linearized augmented plane wave method to perform ab initio total energy calculations, we have explored magnetic ordering in one-dimensional Zr wires. The result shows that Zr can form linear, or dimerized, or zigzag wires, and the magnetic properties strongly depend on their geometric structures. The linear and zigzag wires exhibit ferromagnetic ground states at the equilibrium bonding distance, while the dimerized wire, despite its higher stability than that of the linear one, exhibits nonmagnetic ground states. The most stable geometry is shown to be the zigzag wire with a magnetic moment of 0.26μB per atom.     

Ba_xWO_3的微波合成、晶体结构和超导电性研究

以分析纯的BaCO3、WO3以及W粉为原料,通过混合微波方法合成了钡物青铜BaxWO3(0.14≤x≤0.25).样品的晶体结构为正交和四方两相共存,随着x的增加正交相的衍射峰逐渐减弱,而四方相的衍射峰呈现出增强的趋势.当x从0.14增加到0.25时,电阻率ρ下降了约两个数量级,且在x=0.2附近发生了从半导体到金属的转变.交流磁化率测量显示Ba0.21WO3在Tc=2.4K时发生了超导转变.     

碱金属碘化物后处理制备大晶粒CH3NH3PbI3钙钛矿薄膜,

有机-无机杂化钙钛矿太阳电池作为一种低成本、高效的光伏技术具有巨大的发展潜力,制备大晶粒、致密的钙钛矿吸收层仍然是获得高效钙钛矿太阳电池的关键因素.本文采用简单碱金属碘化物(NaI,KI,CsI)后处理方法诱导CH3NH3PbI3薄膜二次结晶,成功制备了微米级大晶粒、致密的CH3 NH3 PbI3钙钛矿薄膜.与KI相比,NaI和CsI更有利于促进钙钛矿薄膜晶粒长大.并且碱金属碘化物后处理能够钝化晶界,降低钙钛矿薄膜内的缺陷.最后,碱金属掺杂对CH3NH3PbI3带隙的影响很小,不改变其接近单节电池带隙的最优值.因此,碱金属碘化物后处理是进一步提高钙钛矿太阳电池的有效方法.     

Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films

The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures P_g. The results suggest that films deposited at P_g = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at P_g = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at P_g= 300 Pa is clearly different from that of μc-Si:H at P_g = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under P_g= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.