强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO₂界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO₂界面产生损伤的机理，并对实验结果进行了解释。     

High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch （PCSS） in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.     

Photon-activated charge domain in high-gain photoconductive switches

We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.