Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes (QLEDs), electron injection is insufficient, which would degrade device efficiency and stability. Herein, we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively. Moreover, it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel. As a result, the maximum external quantum efficiency of blue QLED was increased from 2.55% to 4.60%, and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device. Our work indicates that election injection plays an important role in blue QLED efficiency and stability.     

原子吸收光谱法测定气样中一氧化碳的研究

本文研究了用自制Ｎｉ（ＣＯ）４发生管和电加热石英管原子化器间接测定一氧化碳的条件，探讨了Ｎｉ（ＣＯ）４的产生和在石英管中原子化效率及干扰消除。     

Aligned ZnO Nanofibre Array Prepared by Vapour Transport in Air

An aligned zinc oxide nanofibre array has been fabricated by heating the mixture of ZnO, Ga2Oa, and graphite powders in atmosphere. The ZnO nanofibre showed a uniform size of about 150nm in diameter and 50μm in length. The nanofibres grew predominantly along one direction. Both x-ray diffraction (XRD) and Raman shift spectra show that the product is composed of ZnO with the typical hexagonal structure. The good crystallinity of these ZnO nanofibres has been verified by photoluminescence spectra with strong UV emission at 287nm and weak green band emission observed at room temperature. The component of the product was analysed by XRD,Raman shift spectrum, x-ray energy dispersion (EDX) and x-ray photoelectronic energy spectroscopy (XPS). The growth process and the characteristics can be interpreted by vapour-liquid-solid mechanism.     

基于混合数值法的功能梯度材料板瞬态热响应分析

采用混合数值法分析了功能梯度材料板中瞬态热响应问题．功能梯度材料板的材料特性沿板厚方向连续变化,在梯度板中心作用温度变化的热源,此热源沿板厚方向连续分布．得出了温度变化对梯度板的影响,观测点处的位移响应与应力变化随时间分布的曲线以及瞬态的位移响应．研究表明,温度变化对板的作用效果与外载作用对板的作用效果是相当的．此研究是对混合数值法的在热领域应用的延伸与开拓,对热响应问题的研究具有一定的指导意义．     

Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Negative capacitance(NC) in dye-sensitized solar cells(DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current(AC) recombination resistance(Rrac) and the direct current(DC) recombination resistance(Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.     

Disc-Capped ZnO Nanocombs

Nanocombs with a disc cap structure of ZnO have been synthesized on Si substrates by using pure Zinc powaers as the source materials based on a vapour-phase transport process. The morphology and the microstructure are investigated by a scanning electron microscopy and x-ray diffraction. Based on the transmission electron microscopy and selected area electron diffraction analysis, the growth directions of three representative parts, nanoribbon stem, nanorod branch and nanodisc cap of the nanocomb are revealed. The growth mechanism of the disc-capped nanocombs is discussed based on the self-catalyzed vapour-liquid-solid process.     

Photon-activated charge domain in high-gain photoconductive switches

We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.     

基于水热法制备的ZnO纳米棒的CO传感器

纳米结构的氧化锌(ZnO)可以吸附大量的气体,并且在吸附了气体之后形成特定的表面态,从而对其导电性产生显著的影响。用水热法在ITO电极之间制备了ZnO纳米棒阵列,通过扫描电镜(SEM)、X射线衍射(XRD)和高分辨透射电镜(HRTEM)等表征后发现,制得的ZnO纳米棒具有较好的结晶性。在200℃下,当1.25mg/L的CO气体通过ZnO纳米棒时,ITO电极两端的电流发生了较明显的改变,显示该装置对CO气体具有较明显的响应(灵敏度为18)。可以预见通过改变电极之间生长的ZnO纳米结构形貌,提高纳米结构的表面利用率,以及适当提高测试温度,可以进一步提高传感器的灵敏度。制作的气体传感器具有简单、廉价、环保的特点,对于气体传感器的设计提供了新的思路。