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High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre 下载免费PDF全文
A high efficiency and broad bandwidth grating coupler
between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre
is designed and fabricated. Coupling efficiencies of 46\% and
25\% at a wavelength of 1.55~μ m are achieved by simulation
and experiment, respectively. An optical 3~dB bandwidth of 45~nm
from 1530~nm to 1575~nm is also obtained in experiment. Numerical
calculation shows that a tolerance to fabrication error of 10~nm
in etch depth is achievable. The measurement results indicate that
the alignment error of ±2~μ m results in less than 1~dB
additional coupling loss. 相似文献
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Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator 下载免费PDF全文
A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.SdB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40μm is demonstrated as well. 相似文献
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A 2× 2 electro-optic switch is experimentally demonstrated
using the optical structure of a Mach--Zehnder interferometer (MZI) based
on a submicron rib waveguide and the electrical structure of a PIN diode on
silicon-on-insulator (SOI). The switch behaviour is achieved through
the plasma dispersion effect of silicon. The device has a modulation arm
of 1~mm in length and cross-section of 400~nm× 340~nm. The
measurement results show that the switch has a VπLπ
figure of merit of 0.145~V\cdot cm and the extinction ratios of two
output ports and cross talk are 40~dB, 28~dB and -28~dB,
respectively. A 3~dB modulation bandwidth of 90~MHz and a switch
time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also
demonstrated. 相似文献
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Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (MMM). Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement Pslot and the maximum normalized average optical intensity Islot are 42% and 26um^-2, respectively. 相似文献
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全光逻辑门是全光计算以及全光信号处理系统中关键的光子器件.随着互补金属氧化物半导体(COMS)工艺的发展,基于半导体材料微纳波导全光逻辑门已经成为集成光学领域中的重要方向;尤其是硅基光子集成器件在近些年成为了国际研究热点.文章主要对基于绝缘体上的硅(SOD)和Ⅲ-Ⅴ族化合物材料不同波导结构(马赫-曾德尔干涉仪(Mach-Zehnder interferometer)微环谐振腔和条形波导结构)的全光逻辑门的研究进展进行了介绍,并且在器件的工作速率和功耗方面,分别对上述基于SOI和Ⅲ-Ⅴ族化合物材料三种不同波导结构的全光逻辑门进行了分析和比较. 相似文献
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