基于临界电子密度的多载波微放电全局阈值分析

多载波微放电即发生在宽带、大功率真空无源微波部件中的二次电子倍增放电现象, 是影响空间和加速器应用中无源微波部件长期可靠性的主要隐患. 多载波微放电全局阈值功率的预测对于工作在真空环境中的微波部件至关重要, 但迄今尚无有效方法进行上述阈值的准确分析. 本文将微放电发生过程中二次电子分布区域等效为等离子体, 通过在理论上建立微波部件的电磁特性和电子密度间的对应关系, 提出了一种基于测试系统可检测水平的多载波微放电全局阈值功率分析方法. 为了能够通过蒙特卡罗优化方法得到全局阈值, 进一步基于电子加速的类半正弦等效, 提出了微放电演化过程中电子数涨落的快速计算方法. 基于以上两种方法得到的针对实际微波部件的全局阈值分析结果与实验结果相符合. 不同于传统基于多载波信号功率分析的经验方法, 本文基于临界电子密度判断依据和电子数涨落快速计算, 为多载波微放电全局阈值的准确预测提供了一种高效的分析方法.     

An efficient multipaction suppression method in microwave components for space application

Multipaction,caused by the secondary electron emission phenomenon,has been a challenge in space applications due to the resulting degradation of system performance as well as the reduction in the service life of high power components.In this paper we report a novel approach to realize an effective increase in the multipaction threshold by employing micro-porous surfaces.Two micro-porous structures,i.e.,a regular micro-porous array fabricated by photolithography pattern processing and an irregular micro-porous array fabricated by a direct chemical etching technique,are proposed for suppressing the secondary electron yield(SEY) and multipaction in components,and the benefits are validated both theoretically and experimentally.These surface processing technologies are compatible with the metal plating process,and offer substantial flexibility and accuracy in topology design.The suppression effect is quantified for the first time through the proper fitting of the surface morphology and the corresponding secondary emission properties.Insertion losses when using these structures decrease dramatically compared with regular millimeter-scale structures on high power dielectric windows.SEY tests on samples show that the maximum yield of Ag-plated samples is reduced from 2.17 to 1.58 for directly chemical etched samples.Multipaction testing of actual C-band impedance transformers shows that the discharge thresholds of the processed components increase from 2100 W to 5500 W for photolithography pattern processing and 7200 W for direct chemical etching,respectively.Insertion losses increase from 0.13 d B to only 0.15 d B for both surface treatments in the transmission band.The experimental results agree well with the simulation results,which offers great potential in the quantitative anti-multipaction design of high power microwave components for space applications.     

多载波微放电阈值的粒子模拟及分析

多载波微放电阈值的准确分析对于空间大功率微波系统的长期可靠性至关重要.近年来,一种源于多载波包络周期间少量剩余电子累积的"长周期"微放电机制引发广泛关注.国内外研究者普遍认为,相对源于单个周期内电子累积的"周期内"微放电,"长周期"微放电应该被优先激发、具有更低的阈值.但依据长周期微放电判据分析所得的阈值显著高于实验结果.针对这一问题,本文采用与实验系统可比拟的微放电判据,在相同多载波信号激励、相同微波部件条件下,对微放电的演化过程进行了粒子模拟,分析了多载波微放电、特别是周期内微放电的行为特性和发生条件,有效地解释了实验结果.本文的粒子模拟结果表明,给定微波部件被优先激发的多载波微放电类型取决于载波频率的配置,长周期微放电并非一定被优先激发,这是导致基于长周期微放电判据分析所得阈值显著高于实验结果这一问题的原因所在.以上结论对于空间大功率微波部件的多载波微放电全局阈值评估和抑制设计具有指导意义.