锥形半导体激光器研究进展

锥形半导体激光器具有高功率、高光束质量等特点,因此受到广泛关注并成为研究热点。从3种结构(传统结构、分布式布拉格反射(DBR)结构、侧向光栅条纹结构)的锥形半导体激光器出发,对国内外近十年具有代表性研究成果进行综述,介绍其理论研究和实验进展,并对锥形半导体激光器的未来发展进行展望。     

Low Specific On-Resistance SOI LDMOS with Non-Depleted Embedded P-Island and Dual Trench Gate

A new silicon-on-insulator(SOI) trench lateral double-diffused metal oxide semiconductor(LDMOS) with a reduced specific on-resistance R_(on),sp is presented. The structure features a non-depleted embedded p-type island(EP) and dual vertical trench gate(DG)(EP-DG SOI). First, the optimized doping concentration of drift region is increased due to the assisted depletion effect of EP. Secondly, the dual conduction channel is provided by the DG when the EP-DG SOI is in the on-state. The increased optimized doping concentration of the drift region and the dual conduction channel result in a dramatic reduction in R_(on),sp. The mechanism of the EP is analyzed,and the characteristics of R_(on),sp and breakdown voltage(BV) are discussed. Compared with conventional trench gate SOI LDMOS, the EP-DG SOI decreases R_(on),sp by 47.1% and increases BV from 196 V to 212 V at the same cell pitch by simulation.