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We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1-xN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects. 相似文献
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通过电子能谱仪对经阳极氧化表面钝化工艺处理的的HgCdTe表面所生成的氧化膜有界面进行深度分析研究,结果表明,该氧化膜中Te和Cd的单质成分存在,氧化膜中的氧化物形式为TeO2,CdTe2O5和HgTe2O5;在界面中,随着剖析深度的增加Te2O^2-5,向TeO^2-3过渡。 相似文献
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