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1.
The melting curve of MgSiO分子动力学 MgSiO3钙钛矿 熔化温度 高压melting temperature, molecular dynamics, high pressureProject supported by the National Natural Science Foundation of China (Grant Nos 10274055 and 10376021),the Natural Science Foundation of Gansu Province, China (Grant No 3ZS051-A25-027) and the Scientific Research Foundation of Education Bureau of Gansu Province, China (Grant No 0410-01).2005-01-125/8/2005 12:00:00 AMThe melting curve of MgSiO3 perovskite is simulated using molecular dynamics simulations method at high pressure. It is shown that the simulated equation of state of MgSiO3 perovskite is very successful in reproducing accurately the experimental data. The pressure dependence of the simulated melting temperature of MgSiO3 perovskite reproduces the stability of the orthorhombic perovskite phase up to high pressure of 130GPa at ambient temperature, consistent with the theoretical data of the other calculations. It is shown that its transformation to the cubic phase and melting at high pressure and high temperature are in agreement with recent experiments.  相似文献   
2.
高压下MgO的热弹性研究   总被引:1,自引:0,他引:1  
利用第一原理平面波赝势方法和广义梯度近似研究了广泛温度和压强范围内MgO的热弹性特性.MgO从低压NaCl到高压CsCl结构的相变压强为397 GPa,表明它在地球内部不会发生相变.在压强上升到150 GPa时,MgO的绝热弹性模量跟0 GPa时的实验值和其他赝势在高压下的计算结果基本一致.从0 GPa上升到20 GPa时,MgO的各向异性逐渐减小;在20?150 GPa时绝对值逐渐增大.MgO明显地违背了Cauchy条件,反应出非中心多体力是重要的.另外,MgO的热力学参量与实验也符合的很好.  相似文献   
3.
Shan Feng 《中国物理 B》2022,31(3):36104-036104
When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al0.5Ga0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al0.5Ga0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that AlAs, GaAs, and AlGa antisite defects are introduced to improve the hole or electron mobility of GaAs/Al0.5Ga0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.  相似文献   
4.
The equation of state of MgSiO3 perovskite under high pressure and high temperature is simulated using the molecular dynamics method. It was found that the molecular dynamics simulation is very successful in accurately reproducing the measured molar volumes of MgSiO3 perovskite over a wide range of temperatures and pressures. The simulated equation of state of MgSiO3 perovskite matched experimental data at up to 140GPa at 300 K, as well as the fitting data of others and results from the first-principles simulation based on the local density approximation. The simulated equations of state of MgSiO3 perovskite at higher temperatures and higher pressures also correspond to the other calculations. In addition, the volume compression data of MgSiO3 perovskite is simulated up to 120 GPa at 300, 900, 2000 and 3000 K, respectively.  相似文献   
5.
运用密度泛函理论和含时密度泛函理论研究了两种含二-二甲基芴氨基苯并呋喃基团的有机染料敏化剂的几何结构、电子结构、极化率和超极化率以及紫外可见谱. 基于理论计算和实验结果的一致性指认了电子吸收谱的特征. 可见区的吸收带都与光诱导电荷转移过程有关,二甲基芴氨基苯并呋喃基团是在光电转换敏化中起主要作用的基团. 通过对两种染料敏化剂的比较,分析了亚乙烯基对几何结构、电子结构和光谱特性影响.  相似文献   
6.
数字全息是用CCD记录全息图并用计算机数值重建全息像的一种全息新方法.在数字全息中,通过对不同记录参数下记录的全息图的数值处理,可以消除零级光和共轭光,从而将数字全息系统看作是一个线性系统.本文依据全息理论和付里叶频谱分析,对菲涅尔数字全息系统的脉冲响应和分辨本领进行了理论分析.结果表明,在矩形等间隔抽样的情形下,菲涅尔数字全息的脉冲响应是由CCD有限大小的孔径衍射斑调制的矩形函数;菲涅尔数字全息的分辨率由CCD的孔径尺寸决定;由于CCD像素具有一定的大小,使得点光源的像发生弥散.  相似文献   
7.
利用壳层模型分子动力学方法,在高温高压条件下对闪锌矿相GaN的压力体积关系、定压和定容热容及格林爱森参数进行了比较研究,其中Ga-Ga、Ga-N和N-N三组离子对间的相互作用通过极化势模型来描述,即出于对半导体材料GaN离子特性的考虑而分别给予Ga离子和N离子以两组不同大小的电荷.结果表明计算得到的环境条件下的热力学参数和最近的其他理论结果吻合,同第一性原理计算结果比较,定容热容在低温下的差别可以用来解释不同方法所采用的不同近似机制.最后在300?2000 K和0?40 GPa条件下,对闪锌矿相GaN的物理特性做了总结.  相似文献   
8.
采用从头算平面波赝势(PWP)方法结合电子交换关联能的广义梯度近似(GGA)理论,对不同压力下碘化钠的晶体结构进行几何优化计算,得到体系的最稳定优化构型和相应的能量,利用胡克定律计算得到了相应压力下的弹性性质,取得了碘化钠单晶在零温条件下、压力0~30 GPa范围内弹性常数与压力的关系.根据弹性波在晶体中的传播行为求解了碘化钠单晶[100][、110]、[111]三个主要方向的声速.  相似文献   
9.
本文运用密度泛函B3LYP/6-311+G(3df,2p)方法研究了联氨分子的电子结构和能量,并系统分析了联氨分子的分解反应,计算绘制了单分子联氨在基态和单态第一激发态下沿N-N分解反应的势能曲线。本文计算发现联氨分子在这两种电子态下的离解能分别是:基态58.8 kcal/mol,单态第一激发态495.5 kcal/mol。基态分子分解反应是吸热反应,而单态第一激发态分解反应是放热反应。计算发现单态第一激发态的激发能是554.2 kcal/mol。结合这两种电子态下联氨分子的红外振动频率分析,本文认为,在非强制断键的情况下,联氨分子沿N-N键均裂而生成两个NH2自由基的可能性很小。  相似文献   
10.
The thermoelastic properties of CaO over a wide range of pressure and temperature are studied using density functional theory in the generalized gradient approximation. The transition pressure taken from the enthalpy calculations is 66.7GPa for CaO, which accords with the experimental result very well. The athermal elastic moduli of the two phases of CaO are calculated as a function of pressure up to 200GPa. The calculated results are in excellent agreement with existing experimental data at ambient pressure and compared favourably with other pseudopotential predictions over the pressure regime studied. It is also found that the degree of the anisotropy rapidly decreases with pressure increasing in the B1 phase, whereas it strongly increases as the pressure increases in the B2 phase. The thermodynamic properties of the B1 phase of CaO are predicted using the quasi-harmonic Debye model; the heat capacity and entropy are consistent with other previous results at zero pressure.  相似文献   
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