Multicriteria Goal Games

In this paper, we deal with multicriteria matrix games. Different solution concepts have been proposed to cope with these games. Recently, the concept of Pareto-optimal security strategy which assures the property of security in the individual criteria against an opponent's deviation in strategy has been introduced. However, the idea of security behind this concept is based on expected values, so that this security might be violated by mixed strategies when replications are not allowed. To avoid this inconvenience, we propose in this paper a new concept of solution for these games: the G-goal security strategy, which includes as part of the solution the probability of obtaining prespecified values in the payoff functions. Thus, attitude toward risk together with payoff values are considered jointly in the solution analysis.     

Monolayers of hydrogen-bonded polymer blends at the air–water interface: poly(vinylacetate)+poly (4-hydroxystyrene)

 The surface pressure (Π) vs surface concentration (Γ_s) curves of the hydrogen-bonded polymer blend poly(vinylacetate)+ poly(4-hydro-xystyrene) (PVAc+P4HS) have been measured at 25 °C onto a water subphase at pH=2.0. While PVAc forms extended monolayers, and the free surface of water is found to be a good solvent for it, P4HS forms compressed monolayers, and the surface is a near Θ-type solvent for it. PVAc and P4HS form miscible non-ideal monolayers until near the collapse pressure through the whole concentration range. The composition dependence of the Π–Γ_s curves is rather complex. Contrary to what might be expected, the addition of PVAc to the blend does not reduce the rigidity of the monolayer until its weight fraction is larger than 0.5. The compressibility data of the P4HS-rich monolayers suggest the existence of a second maximum at high surface coverages, a result already observed in some polysiloxanes. Received: 11 March 1998 Accepted: 7 May 1998     

Langmuir monolayers of the zwitterionic surfactant hexadecyl 1-N-L-tryptophan glycerol ether

We report the formation of Langmuir monolayers of pure zwitterionic hexadecyl 1-N-L-tryptophan glycerol ether (C(16)-TGE) surfactant and mixed monolayers of cationic-zwitterionic surfactant obtained modifying the pH of the subphase. The pressure-area and surface potential-area isotherms and fluorescence microscopy measurements have been used to characterize the surface phase transitions in the monolayers. These transitions appeared at larger areas as the pH decreased from 6.0 to 2.0 and almost disappeared as the pH decreased further. The analysis of the surface potential and the infrared reflection-absorption spectroscopy data suggests that the phase transition is associated with a change of orientation of both the hydrocarbon chain and the aromatic group of the surfactant with respect to the air-water surface. The surface rheology of the monolayers was studied by quasielastic light scattering and by the oscillatory barrier technique. The results indicate that there is at least one relaxation process in the monolayer.     

Development of a 1K × 1K, 8–12 μm QWIP array

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a 1,024 × 1,024 (1K × 1K), 8–12  μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using an L3/Cincinnati Electronics silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). We have integrated the 1K × 1K array into an SE-IR based imaging camera system and performed tests over the 50–80 K temperature range achieving BLIP performance at an operating temperature of 57 K. The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. One of the advantages of GaAs QWIP technology is the ability to fabricate arrays in a fashion similar to and compatible with silicon IC technology. The designer’s ability to easily select the spectral response of the material from 3 μm to beyond 15 μm is the result of the success of band-gap engineering and the Army Research Lab is a leader in this area. In this paper we will present the first results of our 1K × 1K QWIP array development including fabrication methodology, test data and imaging capabilities.     

Dynamics of the immobilization of anaerobic meshopilic bacteria on a plastic support

Applied Biochemistry and Biotechnology - In this article, a study of the dynamics of the immobilization of mesophilic anaerobic bacteria was conducted. Low-density polyethylene (LDPE) ground to...     

Generalized Maximin Solutions in Multicriteria Bargaining

In this paper we address bargaining games where the agents have to take into account different criteria to value the decisions. We propose the class of generalized maximin solutions, as the natural extension for these games of the maximin solutions in conventional bargaining. In order to refine this solution concept, we define a multicriteria lexicographic partial ordering and present the class of generalized leximin solutions as those that are nondominated with respect to this relation. We establish some properties of these solutions and characterize them as solutions of multicriteria problems. The research of the authors is partially supported by the Spanish Ministry of Science and Technology projects BFM2002-11282-E and BEC2003-03111.     

Adsorption of water-soluble polymers with surfactant character. Dilational viscoelasticity

A brief summary of dilational surface viscoelatic properties of spread and adsorbed surfactant polymer films at the air-water interface is reported. The viscoelastic moduli have been measured as a function of frequency and surface pressure. The combination of several techniques, oscillating drop and barrier experiments and electrocapillary waves (ECW), has allowed us to investigate a broad frequency range. The dynamic elasticity epsilon shows a slight change with frequency and a noticeable pressure dependence for both kinds of monolayers. In the spread films, elasticity increases steeply with surface pressure, and reaches a constant value before the polymer begins to dissolve into the bulk. On the other hand, the adsorbed films exhibit a pronounced elasticity maximum, followed by a considerable decay when a loose surface structure is formed. The position of the maximum depends on the polymer chemical composition and molecular weight. The results on the overlapping surface pressure range confirm the dynamic equivalence of spread and adsorbed monolayers. At low surface concentration, the agreement between static and dynamic elasticity is quite satisfactory, but the values diverge considerably at higher surface pressures. The loss modulus omegakappa decreases monotonically with increasing omega, becoming zero (it can even take apparent negative values) for the highest frequencies. The frequency dependence of the elasticity has been well described by the diffusive control model of Lucassen-van den Tempel (LVT). However, its predictions for omegakappa do not coincide with the experimental data. The differences between experimental and theoretical values increase at low frequencies.     

电环形谐振腔表面几何参数对太赫兹超材料吸收体性能的影响

本文分析了电环形谐振腔的几何参数对超材料吸收体吸收率的影响。文中详细分析了电环形谐振腔参数、介电层（间隔物）厚度和电环形谐振腔厚度对超材料吸收体的影响,在此基础上,设置正交实验分析了几种参数的综合影响,最终获得超材料的理论吸收率。根据上述结果,制备了2个超材料吸收体的原理样机,经实验测得,原理样机的窄带吸收率高于98%。本文的研究成果为高性能吸收器的设计提供了指导。     

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

We have demonstrated GaN/AlN quantum dots (QD) photodetectors, relying on intraband absorption and in-plane carrier transport in the wetting layer. The devices operate at room temperature in the wavelength range 1.3–1.5 μm. Samples with 20 periods of Si-doped GaN QD layers, separated by 3 nm-thick AlN barriers, have been grown by plasma-assisted molecular-beam epitaxy on an AlN buffer on a c-sapphire substrate. Self-organized dots are formed by the deposition of 5 monolayers of GaN under nitrogen-rich conditions. The dot height is 1.2±0.6 to 1.3±0.6 nm and the dot density is in the range 10¹¹–10¹² cm⁻². Two ohmic contacts were deposited on the sample surface and annealed in order to contact the buried QD layers. The dots exhibit TM polarized absorption linked to the s–p_z transition. The photocurrent at 300 K is slightly blue-shifted with respect to the s–p_z intraband absorption. The responsivity increases exponentially with temperature and reaches a record value of 10 mA/W at 300 K for detectors with interdigitated contacts.     

AlGaN-based UV photodetectors

Al_xGa_1−xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes, p–n junction photodetectors and phototransistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date.