Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

A 9 μm cutoff 640 × 512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. A noise equivalent differential temperature (NEDT) of 10.6 mK is expected at a 65 K operating temperature with f/2 optics at a 300 K background. This focal plane array has shown background limited performance at a 72 K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long-wavelength infrared camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEDT, uniformity, and operability. In the second section of this paper, we discuss the first demonstration of a monolithic spatially separated four-band 640 × 512 pixel QWIP focal plane array and its performance. The four spectral bands cover 4–5.5, 8.5–10, 10–12, and 13.5–15 μm spectral regions with 640 × 128 pixels in each band. In the last section, we discuss the array performance of a 640 × 512 pixel broad-band (10–16 μm full-width at half-maximum) QWIP focal plane.     

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1)A substrate

p-type quantum-well infrared photodetectors (QWIPs) demonstrate normal incidence response due to band mixing by utilizing valence band transitions that may break the selection rule limiting n-type QWIPs. Due to even more complicated valence band structure in (1 1 1) orientation, it is interesting to see that the p-type QWIP show both absorption and photocurrent response dominant in normal incidence. The p-type GaAs/AlGaAs QWIP was fabricated on GaAs(1 1 1)A substrate by molecular beam epitaxy (MBE) using silicon as dopant with a measured carrier concentration of 1.4 × 10¹⁸ cm⁻³. The photocurrent spectrum exhibits a peak at a wavelength of 7 μm with a relatively broad peak width (Δλ/λ_p  50%), indicating that the final state is far deep within the continuum of the valence band. The p-QWIP demonstrates a responsivity of about 1 mA/W, which is limited by the relatively low doping concentration.     

Four-band quantum well infrared photodetector array

A four-band quantum well infrared photodetector (QWIP) focal plane array (FPA) has been demonstrated by stacking different multi-quantum well structures, which are sensitive in 4–5.5, 8.5–10, 10–12, and 13–15.5 μm infrared bands. This 640 × 514 format FPA consists of four 640 × 128 pixel areas which are capable of acquiring images in these infrared bands. In this application, instead of quarter wevelength groove depth grating reflectors, three-quarter wavelength groove depth reflectors were used to couple radiation to each QWIP layer. This technique allows us to optimize the light coupling to each QWIP stack at corresponding pixels while keeping the pixel (or mesa) height at the same level, which will be essential for indium bump-bonding with the multiplexer. In addition to light coupling, these gratings serve as a contact to the active stack while shorting the unwanted stacks. Flexible QWIP design parameters, such as well width, barrier thickness, doping density, and the number of periods, were cleverly exploited to optimize the performance of each detector while accommodating requirements set by the deep groove light coupling gratings. For imaging, detector array is operated at temperature T=45 K, and each detector shows a very high D^*>1×10¹¹ cm  /W for 300 K background with f/2 optics. This initial array gave excellent images with 99.9% of the pixels working, demonstrating the high yield of GaAs technology.     

Uncooled microbolometer detector: Recent developments at Ulis

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Therefore, to answer these markets, a 35 μm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160 × 120 and 384 × 288 arrays production. Besides a wide-band version from uncooled 320 × 240/45 μm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 μm pixel-pitch detector as well as the wide-band 320 × 240 infrared focal plane arrays with a pixel pitch of 45 μm. Information on the new 640 × 480 array with a pixel pitch of 25 μm is also presented.     

Demonstration of 640 × 512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIPs) are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR dot-in-a-well (DWELL) structures based on the InAs/InGaAs/GaAs material system. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. DWELL QDIPs were also experimentally shown to absorb both 45° and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. The most recent devices exhibit peak responsivity out to 8.1 μm. Peak detectivity of the 8.1 μm devices has reached 1 × 10¹⁰ Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640 × 512 pixels QDIP imaging FPA. This QDIP FPA has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60 K operating temperature.     

THALES long wave QWIP thermal imagers

THALES have developed for volume manufacture high performance low cost thermal imaging cameras based on the THALES Research Technology (TRT) third generation gallium arsenide long wave QWIP array. Catherine XP provides 768 × 575 CCIR video resolution and Catherine MP provides 1280 × 1024 SXGA video resolution. These compact and rugged cameras provide 24 h passive observation, detection, recognition, identification (DRI) in the 8–12 μm range, providing resistance to battlefield obscurants and solar dazzle, and are fully self contained with standard power and communication interfaces. The cameras have expansion capabilities to extend functionality (for example, automatic target detection) and have network battlefield capability. Both cameras benefit from the high quantum efficiency and freedom from low frequency noise of the TRT QWIP, allowing operation at 75 K, low integration times and non interruptive non uniformity correction. The cameras have successfully reached technology readiness level 6/7 and have commenced environmental qualification testing in order to complete the development programmes. These latest additions to the THALES Catherine family provide high performance thermal imaging at an affordable cost.     

Towards dualband megapixel QWIP focal plane arrays

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 × 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024 × 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.     

GaAs(0 0 1) surface reconstructions: geometries, chemical bonding and optical properties

We re-examine the GaAs(0 0 1) surface by means of first-principles calculations based on a real-space multigrid method. The c(4×4),(2×4) and (4×2) surface reconstructions minimize the surface energy for anion-rich, stoichiometric and cation-rich surfaces, respectively. Structural models proposed in the literature to explain the Ga-rich GaAs(0 0 1) (4×6) surface are dismissed on energetic grounds. The electronic properties of the novel ζ(4×2) structure are discussed in detail. We calculate the reflectance anisotropy of the energetically most favoured surfaces. A strong influence of the surface geometry on the optical anisotropy is found.     

Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f₀, of 3.2 THz (93 μm) was obtained by using n-type GaAs emitter doped to 1 × 10¹⁸ cm⁻³ and Al_0.04Ga_0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 μm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are 19% and 5.5 × 10⁸ Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

Monolithically integrated near-infrared and mid-infrared detector array for spectral imaging

A multi-band focal plane array sensitive in near-infrared (near-IR) and mid-wavelength infrared (MWIR) is been developed by monolithically integrating a near-infrared (1–1.5 μm) p–i–n photodiode with a mid-infrared (3–5 μm) QWIP. This multiband detector involves both intersubband and interband transitions in III–V semiconductor layer structures. Each detector stack absorbs photons within the specified wavelength band, while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. Monolithically grown material characterization data and individual detector test results ensure the high quality of material suitable for near-infrared/QWIP dual-band focal plane array.     

NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions

This paper presents the design, fabrication and characterization of a QWIP photodetector capable of detecting simultaneously infrared radiation within near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR). The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum well structure was designed using a computational tool developed to solve self-consistently the Schrödinger–Poisson equation with the help of the shooting method. Intersubband absorption in the sample was measured for the MWIR and LWIR using Fourier transform spectroscopy (FTIR) and the measured peak positions were found at 5.3 μm and 8.7 μm which agree well with the theoretical values obtained 5.0 μm and 9.0 μm for the two infrared bands which indicates the accuracy of the self-consistent model. The photodetectors were fabricated using a standard photolithography process with exposed middle contacts to allow separate bias and readout of signals from the three wavelength bands. The measured photoresponse gave three peaks at 0.84 μm, 5.0 μm and 8.5 μm wavelengths with approximately 0.5 A/W, 0.03 A/W and 0.13 A/W peak responsivities for NIR, MWIR and LWIR bands, respectively. This work demonstrates the possibility of detection of widely separated wavelength bands using interband and intersubband transitions in quantum wells.     

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10⁸ cm Hz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.     

Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si : Er : O diodes

Electroluminescence (EL) characteristics of avalanching silicon diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Saturation of the Er-related EL intensity is achieved under the avalanche regime at current density an order of magnitude lower than that under the tunnel regime. Under avalanche regime at 300 K, the effective cross-section for excitation of Er³⁺ ions is equal to 2.3×10⁻¹⁶ cm² and the lifetime of the excited state is equal to 380 μs being four times higher than these values in tunneling diodes.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Material considerations for third generation infrared photon detectors

In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well photoconductors are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. The metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an alternative to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm. In this context the material properties of type II superlattices are considered more in detail.