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采用不加偏压的磁控溅射方法,制备了具有垂直磁晶各向异性的TbCo/Cr非晶垂直磁化膜,并且就Cr底层对TbCo膜磁性能的影响进行了研究。研究发现TbCo磁性层的厚度以及Cr底层的存在都会影响TbCo薄膜磁晶各向异性能的大小。对于厚度为120 nm,并且带有180 nm厚度Cr底层的Tb31C69薄膜而言,其磁晶各向异性能高达4.57×106 erg·cm-3,而对于同样厚度的Tb31C69薄膜,当它没有带Cr底层时,其磁晶各向异性能只有3.24×106 erg·cm-3。扫描电镜的观测结果表明,带有Cr底层的TbCo薄膜具有柱状结构。正是TbCo薄膜内的柱状结构导致了其磁晶各向异性的增强。 相似文献
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Effect of a Cr Underlayer on the Magnetic Properties of TbCo Amorphous FIlms with Perpendicular Anisotropy 总被引:13,自引:0,他引:13 下载免费PDF全文
The effect of the Cr underlayer on the magnetic properties of TbCo amorphous films with perpendicular anisotropy has been investigated.It was found that the Cr underlayer thickness can influence the coercivity of TbCo films.A coercivity as high as 6.3kOe was obtained in 120nm Tb31Co69 films with a 180nm Cr underlayer.This was only 4.4kOe for the same thickness Tb31 CO69 films without the Cr underlayer.Cross-sectional scanning electron microscopy indicated that the TbCo film with the Cr underlayer consisted of a Column structure.It is considered that this heterogeneous structure gives rise to the coercity enhancement of TbCo films in the presence of the Cr underlayer. 相似文献
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Magnetic Exchange—Coupled Sm(Co,R)/Cr(R=Al,Si,Ti,Nb,Cu)series Films for Ultrahigh—Density Longitudinal Recording Media 总被引:1,自引:0,他引:1 下载免费PDF全文
SmCoR(R=Al,Si,Ti,Nb,Cu)/Cr series films were fabricated as one kind of promising materials for the ultrahigh density longtudinal magnetic recording media.The Sm(Co,Al,Si)/Cr thin with coercivity up to 2.36kOe,squareness ratio S near 0.94 and coercive squareness ratio S^* about 0.9 were obtained.The Cr interlayer caused magnetic decoupling in Sm(Co,Al,Si)/Cr/Sm(Co,Al,Si)thin films,High coercivtty of 3400-3840Oe and extremely fine grain size of 5-8nm for the magnetic layer were examined.Using different substrate bias among the Sm(Co,Al,Si)(deposited with substrate bias of -150V)/Sm(Co,Al,Si)(deposited with no substrate bias)/Sm(Co,Al,Si)(deposited with substrate bias of -150V),the multilayer exhibited high coercivity of 2960Oe and S^* of 0.96,Sm(Co,Al,Si)/Sm(Co,Ti,Cu)/Sm(Co,Nb,Cu) trilayer improved matching between the magnetic layer and the Cr underlayer,and led to increasing in-plane anisotropy,high coercivity of 3280Oe and S* of 0.92,Lattice matching of SmCoR{112} and Cr{110},etc.were found under various conditons.The microstructures of these four kinds of medium were also examined.The results suggest that it is possible to produce Sm(Co,Al,Si,Ti,Nb,Cu)multi-layer media with the combined magnetic properties required for the ultrahigh desity magnetic recording. 相似文献
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磁光盘反射率是一个重要的参数,在磁光盘的研制和生产过程中必须进行测试。本文首先介绍了反射率测试的典型方法,然后结合磁光盘磁光特性伺服测试系统提出了一种测试磁光盘反射率的实用有效的方法,使磁光盘磁光特性测试仪既能测试克尔角又能测试反射率。最后对该方法测试反射率的误差进行了评估,并给出了测试实例。 相似文献
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用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜.振动样品磁强计和克尔磁滞回线测试装置的测试结果表明:25℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层(GdFeCo)的极向克尔角为零,读出层呈平面磁化;125℃不加外场时读出层的克尔角最大(O.54°),读出层的磁化方向为垂直磁化;随着温度增高,读出层由平面磁化转变为垂直磁化,在75℃到125℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化.对磁化过程的机理研究表明:饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程,但主要受读出层饱和磁化强度的影响;在较高温度时读出层的磁化强度较小,退磁场能较小,在静磁耦合作用下,使GdFeCo读出层的磁化方向发生转变.制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD-MSR记录介质. 相似文献
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用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质 相似文献
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用磁控溅射法制备了GdFeCo/DyFeCo交换耦合两层薄膜,对交换耦合两层薄膜变温磁化方向进行了研究.结果表明读出层GdFeCo随温度上升从平面磁化转变成垂直磁化,转变过程中主要受饱和磁矩(Ms)的影响.在GdFeCo的补偿温度附近,读出层的磁化强度近于零,退磁场能减小,并在交换耦合的作用下,使读出层的磁化方向发生转变,制备的交换耦合两层薄膜具有中心孔磁超分辨效应.
关键词:
磁光记录
交换耦合两层薄膜
磁化 相似文献
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