方酸染料在离子识别中的研究

作为一种新型的有机功能染料,方酸染料正引起化学界的极大兴趣.由于其特殊的D-A-D结构,方酸染料在可见一近红外区有强烈的吸收和荧光发射,因而越来越多地被应用在离子检测中.本文综述了近期方酸染料化学传感器的发展和应用,分别介绍了方酸染料在阳离子识别和阴离子识别中的分子设计、作用机理及应用,重点综述了方酸染料对汞、铜和锌等...     

N型掺杂应变Ge发光性质

应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于vandeWalle形变势理论,计算了应变情况下半导体Ge材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带间的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了N型掺杂张应变Ge材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强Ge材料直接带隙跃迁发光.在1.5%张应变条件下,N型掺杂Ge的最大内量子效率可以达到74.6%,光增益可以与III-V族材料相比拟.     

A hybrid functional first-principles study on the band structure of non-strained Ge_(1-x)Sn_x alloys

Using hybrid-functional first-principles calculation combined with the supercell method and band unfolding technique we investigate the band structure of non-strained Ge_(1-x)Sn_x alloys with various Sn concentrations. The calculations show that at the Sn concentration of ～ 3.1 mol% the Ge Sn alloy presents a direct band gap. The variation of the band structure are ascribed to the weaker electro-negativity of Sn atoms and a slight charge transfer from Sn atoms to Ge atoms.     

氢稀释对高速生长纳米晶硅薄膜晶化特性的影响

以SiH₄与H₂为气源,采用射频等离子体增强化学气相沉积技术,在较高的压强(230Pa)下,研究氢稀释率对纳米晶硅薄膜的生长速率和晶化特性的影响. 实验表明,薄膜的晶化率,晶粒尺寸随着氢稀释率的提高而增加,当氢稀释率为99%,薄膜的晶化率接近70%. 而沉积速率却随着氢稀释率的减小而增加,当氢稀释率从99%减小到95%时,薄膜的沉积速率由0.3nm/s 增加至0.8nm/s. 关键词： 纳米晶硅薄膜 氢稀释 晶化率 硅烷     

Properties of n-Ge epilayer on Si substrate with in-situ doping technology

The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition(UHVCVD) system are investigated.The growth temperature of ~500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of ~10~(18)cm~(-3).In the n-Ge epilayer,the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence.The enhancements of photoluminescence intensity with the increase of the doping concentration are observed,which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge.The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.