RCE photodiodes at wavelength band of 1.06 μm

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.     

RP-HPLC法测定QOA的含量及有关物质

建立了测定QOA含量及有关物质的RP-HPLC方法。采用Sepax C18(4.6 mm×250 mm,5μm)色谱柱,流动相为乙腈与体积分数0.1%乙酸水溶液(体积比为10:90),流速1.0 m L/min,检测波长241 nm,进样体积为20μL。QOA质量色谱峰与其相邻杂质峰能完全分离,QOA质量浓度在0.5~50μg/m L范围内呈良好的线性关系(A=48387ρ-736.4,γ=0.9999),检出限为10 ng/m L(S/N≥3)。方法 RSD为0.45%,重复性试验RSD为0.37%,稳定性试验RSD为0.21%。     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

AlGaInAs/InP coupled-circular microlasers

AlGaInAs/InP coupled-circular microlasers with radius of 10- and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10 3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.     

用于电光调制器怕有机极化聚合物薄膜材料电光系数的透射法测量

给出一种透射式Teng-Man方法，方便而快捷地测出电晕极化有机非线性材料的电光系数，与二次谐波的测试结果一致。     

Output Characteristics of an InP/InGaAsP Triangle Microcavity Laser

Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10μm, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270K show that lasing modes coexist with the wavelength interval of 39nm at 240K. The emission at 5.2THz can be expected by the mode frequency beating with the 39nm interval.     

聚合物波导制备研究

研制出可行的聚合物光波导制备工艺，采用极化电光聚合物NAPA3做芯层和CL－1做包层制作出脊型结构聚合物光波导，波导通光情况良好。     

谐振腔增强型光电探测器的角度相关特性研究

采用MBE生长In_0.3Ga_0.7As/GaAs和GaInNAs/GaAs量子阱为有源区的器件结构材料,制备出工作在1060nm及1310nm波段的谐振腔增强型光电探测器.对谐振腔增强型光电探测器的空间角度相关特性进行了实验与物理分析,改变光束入射角度,器件谐振接收波长可在大范围调变.     

1.55 μm低温生长GaAs谐振腔增强型探测器

利用低温（200℃）生长的GaAs材料作为吸收层制备了GaAs基1.55 μm谐振腔增强型（RCE） 光电探测器，对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10－12A；光电流谱峰值波长1563 nm；响应谱线半宽4 nm, 具有良好的波长选择性.     

对中专物理与电工基础课相关内容设置的探讨

中专生的培养已趋向突出学生综合素质的提高和应用能力的加强．对此，中专物理课程与电工基础课程（以后简称：物理、电工）共同肩负的任务是使学生通过电场、电路、磁场、磁路中的基本概念、基本定律的学习，达到具有解决工程技术中常遇到的简单电磁问题的基本技能，为全...