Two-photon excitation of confined biexcitons in CuCl quantum dots

We have studied direct creation processes of confined biexcitons in CuCl quantum dots by polarization-dependent resonant two-photon excitation spectroscopy. The two-photon absorption band for the lowest state of the biexciton (total angular momentum J=0) which appears on the lower energy side of confined exciton band was identified from the analysis of the polarization dependence of the photoluminescence excitation spectrum of the biexciton. Furthermore, the two-photon excitation process for the excited state of the biexciton (J=2) was also found with polarization dependence different from the J=0 biexciton state.     

TURNING-OVER OF THE ELECTRIC DIPOLE IN A POLYMER*

The transition from the biexciton to the exciton can turn over the direction of the electric dipole of a polymericmolecule. This turning-over action combined with the photoinduced polarization reversion can be used as a switch. Theswitching speed is governed by the relaxation time of the turning-over process, which can be determined by a dynamicalsimulation.     

All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Quantum-Statistics Behavior of the Exciton-Biexciton System In GaAs/AlAs Type-II Superlattices

We have investigated the quantum-statistics behavior of the exciton-biexciton system from the photoluminescence properties in (GaAs) m /(AlAs) m type-II superlattices with m = 12 and 13 monolayers, where the lowest-energy type-II exciton consists of the n = 1 X electron of AlAs and n = 1 o heavy hole of GaAs. The long exciton lifetime of the order of w s due to the indirect transition nature enables us to obtain precisely the density relation between the exciton and biexciton from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around 1 2 10 10 cm m 2 , the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at a bath temperature up to 8 K under an excitation power of the order of 100 mW/cm 2 , results from the characteristics of Bose-Einstein statistics of the exciton-biexciton system.     

Photo-induced magnetic polarons in semiconductors

Exciton magnetic polarons observed in dilute magnetic semiconductors were investigated by steady-state and pico-second time-resolved photoluminescence measurements and have shown characteristic behavior of exciton localization processes in bulk-Cd_1-x Mn _x Te and also in the quantum structures composed of the dilute magnetic semiconductors. For the quantum structures spin-dependent coherent polarizations associated with excitons and biexcitons were studied by degenerate four-wave mixing experiment. Also investigated for different chalcogenide spinel ferromagnetic semiconductors was photo-induced enhancement of exchange interaction between magnetic ions by direct magnetic flux detection in the vicinity of the Curie temperatures.     

Electromagnetically induced transparency in bulk and microcavity semiconductors

We discuss our recent results on electromagnetically induced transparency (EIT) effects based on intrinsic free exciton and biexciton states in semiconductors. The Λ configuration obtained from the 1S and 2P yellow exciton levels of Cu₂O leads to a well-developed EIT regime, akin to the atomic case. The coherent driving of the exciton–biexciton transition in CuCl induces a tunable transparency window within the polaritonic stop-band, due to the presence of a third polariton branch in the dressed system. In a microcavity configuration, this gives rise to three reflectivity dips in the strong coupling regime.     

Eigenstate symmetry probed by biexciton transitions in a single quantum dot

The eigenstate symmetry in CdSe/ZnSe single quantum dots (SQDs) has been studied by low-temperature magnetoluminescence spectroscopy. Regarding both, the fine structure splitting and the polarization properties of the biexciton transition, the influence of exchange and Zeeman interaction on the eigenstate symmetry of the final state of recombination, the ground state of the single exciton, is investigated.     

CdSe/CdTe II型胶态量子阱中长寿命的单激子、带电激子和双激子

Light-harvesters with long-lived excited states are desired for efficient solar energy conversion systems. Many solar-to-fuel conversion reactions, such as H₂ evolution and CO₂ reduction, require multiple sequential electron transfer processes, which leads to a complicated situation that excited states involves not only excitons (electron-hole pairs) but also multi-excitons and charged excitons. While long-lived excitons can be obtained in various systems (e.g., semiconductor nanocrystals), multi-excitons and charged excitons are typically shorted-lived due to nonradiative Auger recombination pathways whereby the recombination energy of an exciton is quickly transferred to the third carrier on a few to hundreds of picoseconds timescale. In this work, we report a study of excitons, trions (an exciton plus an additional charge), and biexcitons in CdSe/CdTe colloidal quantum wells or nanoplatelets. The typeⅡ band alignment effectively separates electrons and holes in space, leading to a single exciton lifetime of 340 ns which is ~2 order of magnitudes longer than that in plane CdSe nanoplatelets. More importantly, the electron-hole separation also dramatically slows down Auger decay, giving rise to a trion lifetime of 70 ns and a biexciton lifetime of 11 ns, among the longest values ever reported for colloidal nanocrystals. The long-lived exciton, trion, and biexciton states, combined with the intrinsically strong light-absorption capability of two-dimensional systems, enable the CdSe/CdTe type-Ⅱ nanoplatelets as promising light harvesters for efficient solar-to-fuel conversion reactions.     

Photoluminescence and excitation spectra of Cu(AlxGa1−x)S2 films grown by vapor phase epitaxy

Chalcopyrite Cu(Al_xGa_1−x)S₂ alloy films were successfully grown on GaP substrates by vapor phase epitaxy using metallic chlorides (CuCl, GaCl₃ and AlCl₃) and H₂S as source materials. Photoluminescence (PL) spectra of these films taken under a low excitation density using a super high pressure Hg lamp exhibited broad emissions in the orange region. Photoluminescence excitation (PLE) measurements revealed that these broad emissions are effectively excited at the photon energies of A- and the BC-exciton energies. Under the high excitation density using the pulsed XeCl laser, these alloy films showed the exciton related emissions composed of biexciton recombination, exciton-exciton and exciton-carrier scatterings. The influence of the compositional fluctuation was observed on the increase of the full-width at half maximum (FWHM) for the exciton related emission with increase in composition of x.