Control of a multigroup COVID-19 model with immunity: treatment and test elimination

Nonlinear Dynamics - This paper introduces a multigroup COVID-19 model with immunity, in which the total population of each group is partitioned into five compartments, that is, susceptible,...     

Y掺杂WS2二维材料的第一性原理研究

WS₂由于其优异的物理和光电性质引起了广泛关注。本研究基于第一性原理计算方法,探索了本征单层WS₂及不同浓度W原子替位钇(Y)掺杂WS₂的电子结构和光学特性。结果表明本征单层WS₂为带隙1.814 eV的直接带隙半导体。进行4%浓度(原子数分数)的Y原子掺杂后,带隙减小为1.508 eV,依旧保持着直接带隙的特性,随着Y掺杂浓度的不断增大,掺杂WS₂带隙进一步减小,当浓度达到25%时,能带结构转变为0.658 eV的间接带隙,WS₂表现出磁性。适量浓度的掺杂可以提高材料的导电性能,且掺杂浓度增大时,体系依旧保持着透明性并且在红外光和可见光区对光子的吸收能力、材料的介电性能都有着显著提高。本文为WS₂二维材料相关光电器件的研究提供了理论依据。     

有耗介质层上多导体传输线的电磁耦合时域分析方法

目前,针对空间电磁场作用有耗介质层上传输线的电磁耦合,仍缺乏有效的数值分析方法.因此,本文提出一种高效的时域混合算法,很好地解决了有耗介质层上传输线电磁耦合建模难的问题.首先,对经典传输线方程进行改进,推导了适用于有耗介质层上多导体传输线电磁耦合分析的修正传输线方程.然后,结合时域有限差分方法和相应插值技术,求解修正传输线方程,获得多导线及其端接负载上的电压和电流响应,并实现空间电磁场辐射与多导线瞬态响应的同步计算.最后,通过相应计算实例的数值模拟,与CST软件的仿真结果进行对比,验证了时域混合算法的正确性和高效性.     

Meshless acoustic analysis using a weakly singular Burton-Miller boundary integral formulation

The Burton-Miller boundary integral formulation is solved by a complex variable boundary element-free method (CVBEFM) for the boundary-only meshless analysis of acoustic problems with arbitrary wavenumbers. To regularize both strongly singular and hypersingular integrals and to avoid the computation of the solid angle and its normal derivative, a weakly singular Burton-Miller formulation is derived by considering the normal derivative of the solid angle and adopting the singularity subtraction procedures. To facilitate the implementation of the CVBEFM and the approximation of gradients of the boundary variables, a stabilized complex variable moving least-square approximation is selected in the meshless discretization procedure. The results show the accuracy and efficiency of the present CVBEFM and reveal that the method can produce satisfactory results for all wavenumbers, even for extremely large wavenumbers such as k = 10 000.     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.     

On Fermat Diophantine functional equations,little Picard theorem and beyond

Aequationes mathematicae - We discuss equivalence conditions for the non-existence of non-trivial meromorphic solutions to the Fermat Diophantine equation $$f^m(z)+g^n(z)=1$$ with integers $$m,n\ge...     

Exponential ultimate boundedness of fractional-order differential systems via periodically intermittent control

Nonlinear Dynamics - This article investigates the exponential ultimate boundedness of fractional-order differential systems via periodically intermittent control. By utilizing the Lyapunov...