Bi- and Au-Induced Reconstructions on GaAs（001）-2 × 4 Surface

Submonolayer Bi and Au adsorptions on the GaAs（001）-2× 4 surface are investigated by scanning tunnelling microscopy, low energy electron diffraction and first-principles calculations. The 1 ×4 and 3 × 4 reconstructed surface induced by Bi and Au, respectively, are revealed and their structural models are proposed based on experiments and first-principles calculations. Moreover, the validity of the recently proposed generalized electron counting （GEC） model [Phys. Rev. Lett. 97 （2006） 126103] is examined in detail by using the two surfaces. The GEC model perfectly explains the structural features, such Bi-1 × 4 surface and the 3x arrangement of four-atom Au as the characteristic short double-line structure in the clusters.     

一种基于能带工程设计的CaAsSb/InP异质结双极晶体三极管

异质结晶体三极管（HBT）的性能与其材料体系密不可分，利用能带工程可以大大优化器件的结构，提高器件性能，文章从分析HBT的能带结构及设计要求入手，介绍了一种利用能带工程设计的基于GaAsSb/InP材料体系的新型HBT器件的结构及其性能，分析了该器件与其它材料体系器件相比所具有的优异特性，说明了对HBT的各区材料，其带边的相对位置所起的重要作用，最后，文章还报道了近期的实验情况，说明了GaAsSb/InP体系HBT的实际性能与理论预言一致。     

催化剂的性质对超临界乙醇条件下热解木质素液化的影响

研究了在超临界乙醇中、氢气存在下,一系列金属-酸双功能催化剂的酸性、孔径大小、负载的金属对热解木质素加氢裂解过程的影响．制备并采用N₂等温吸附和BET比表面、X射线衍射、NH₃-程序升温脱附技术对催化剂进行表征．实验结果表明催化剂酸性增强可促进热解木质素的缩聚反应,从而产生大量的焦炭和水,导致其液化效率降低．微孔催化剂比介孔催化剂孔径小,与强酸共同作用会导致热解木质素裂解生成更多的小分子气体．在催化剂上负载金属Ru可有效地抑制热解木质素的缩聚反应,促进其裂解液化．     

Oscillatory electron phonon coupling in Pb/Si（111）deduced by temperature-dependent quantum well states

Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers （ML） have been performed within a temperature range 75-270K. Well-defined quantum well states （QWSs） are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength （λ）. An oscillatory A with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.     

InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/lnP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases, and a blue shift of photoluminescence ( PL) peak energy and narrowing in PL width are obtained.     

通过改变原子电负性调控异硫氰酸苯并恶唑荧光染料的激发态分子内质子转移过程和光物理性质

激发态分子内质子转移因其独特的光学性质而受到研究人员的青睐. 然而,关于改变原子电负性对激发态分子内质子转移过程和光物理性质影响的系统研究相对较少. 本文通过理论方法选择了一系列苯并噁唑异硫氰酸酯荧光染料(2-HOB、2-HSB 和2-HSeB),并通过改变氧族原子的电负性,系统地研究了激发态分子内质子转移过程和光物理性质. 计算的键角、键长、能隙和红外光谱分析表明,3个分子的分子内氢键强度依次为2-HOB<2-HSB<2-HSeB. 相应地,势能曲线的能垒大小为2-HOB>2-HSB>2-HSeB. 此外,计算的电子光谱表明,随着原子电负性的降低,发射光谱发生红移. 本工作将为基于激发态分子内质子转移性质的新型染料的合成和应用提供一定的理论指导.