首页 | 官方网站   微博 | 高级检索  
     

Bi- and Au-Induced Reconstructions on GaAs(001)-2 × 4 Surface
引用本文:唐喆,杨身园,江颖,王文新,贾金锋,薛其坤,王恩哥,吴克辉.Bi- and Au-Induced Reconstructions on GaAs(001)-2 × 4 Surface[J].中国物理快报,2008,25(8):2977-2980.
作者姓名:唐喆  杨身园  江颖  王文新  贾金锋  薛其坤  王恩哥  吴克辉
作者单位:Institute of Physics, Chinese Academy of Sciences, Beijing 100080
基金项目:Supported by the National Natural Science Foundation of China under Grant No 10574146, and the National Basic Research Programme of China under Grant No 2007CB936800.
摘    要:Submonolayer Bi and Au adsorptions on the GaAs(001)-2× 4 surface are investigated by scanning tunnelling microscopy, low energy electron diffraction and first-principles calculations. The 1 ×4 and 3 × 4 reconstructed surface induced by Bi and Au, respectively, are revealed and their structural models are proposed based on experiments and first-principles calculations. Moreover, the validity of the recently proposed generalized electron counting (GEC) model Phys. Rev. Lett. 97 (2006) 126103] is examined in detail by using the two surfaces. The GEC model perfectly explains the structural features, such Bi-1 × 4 surface and the 3x arrangement of four-atom Au as the characteristic short double-line structure in the clusters.

关 键 词:    GaAs  构造模式
收稿时间:2008-5-12
本文献已被 维普 等数据库收录!
点击此处可从《中国物理快报》浏览原始摘要信息
点击此处可从《中国物理快报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号