Bi- and Au-Induced Reconstructions on GaAs(001)-2 × 4 Surface |
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引用本文: | 唐喆,杨身园,江颖,王文新,贾金锋,薛其坤,王恩哥,吴克辉.Bi- and Au-Induced Reconstructions on GaAs(001)-2 × 4 Surface[J].中国物理快报,2008,25(8):2977-2980. |
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作者姓名: | 唐喆 杨身园 江颖 王文新 贾金锋 薛其坤 王恩哥 吴克辉 |
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作者单位: | Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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基金项目: | Supported by the National Natural Science Foundation of China under Grant No 10574146, and the National Basic Research Programme of China under Grant No 2007CB936800. |
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摘 要: | Submonolayer Bi and Au adsorptions on the GaAs(001)-2× 4 surface are investigated by scanning tunnelling microscopy, low energy electron diffraction and first-principles calculations. The 1 ×4 and 3 × 4 reconstructed surface induced by Bi and Au, respectively, are revealed and their structural models are proposed based on experiments and first-principles calculations. Moreover, the validity of the recently proposed generalized electron counting (GEC) model Phys. Rev. Lett. 97 (2006) 126103] is examined in detail by using the two surfaces. The GEC model perfectly explains the structural features, such Bi-1 × 4 surface and the 3x arrangement of four-atom Au as the characteristic short double-line structure in the clusters.
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关 键 词: | 铋 金 GaAs 构造模式 |
收稿时间: | 2008-5-12 |
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