First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.     

Molecular dynamics of MgSiO3 perovskite melting

The melting curve of MgSiO分子动力学 MgSiO3钙钛矿 熔化温度 高压melting temperature, molecular dynamics, high pressureProject supported by the National Natural Science Foundation of China (Grant Nos 10274055 and 10376021),the Natural Science Foundation of Gansu Province, China (Grant No 3ZS051-A25-027) and the Scientific Research Foundation of Education Bureau of Gansu Province, China (Grant No 0410-01).2005-01-125/8/2005 12:00:00 AMThe melting curve of MgSiO3 perovskite is simulated using molecular dynamics simulations method at high pressure. It is shown that the simulated equation of state of MgSiO3 perovskite is very successful in reproducing accurately the experimental data. The pressure dependence of the simulated melting temperature of MgSiO3 perovskite reproduces the stability of the orthorhombic perovskite phase up to high pressure of 130GPa at ambient temperature, consistent with the theoretical data of the other calculations. It is shown that its transformation to the cubic phase and melting at high pressure and high temperature are in agreement with recent experiments.     

高压下MgO的热弹性研究

利用第一原理平面波赝势方法和广义梯度近似研究了广泛温度和压强范围内MgO的热弹性特性．MgO从低压NaCl到高压CsCl结构的相变压强为397 GPa，表明它在地球内部不会发生相变．在压强上升到150 GPa时，MgO的绝热弹性模量跟0 GPa时的实验值和其他赝势在高压下的计算结果基本一致．从0 GPa上升到20 GPa时，MgO的各向异性逐渐减小；在20?150 GPa时绝对值逐渐增大．MgO明显地违背了Cauchy条件，反应出非中心多体力是重要的．另外，MgO的热力学参量与实验也符合的很好．     

Density Functional Theory Study on Organic Dye Sensitizers Containing Bis-dimethylfluorenyl Amino Benzofuran

运用密度泛函理论和含时密度泛函理论研究了两种含二-二甲基芴氨基苯并呋喃基团的有机染料敏化剂的几何结构、电子结构、极化率和超极化率以及紫外可见谱. 基于理论计算和实验结果的一致性指认了电子吸收谱的特征. 可见区的吸收带都与光诱导电荷转移过程有关,二甲基芴氨基苯并呋喃基团是在光电转换敏化中起主要作用的基团. 通过对两种染料敏化剂的比较,分析了亚乙烯基对几何结构、电子结构和光谱特性影响.     

MgSiO3状态方程的分子动力学模拟

The equation of state of MgSiO3 perovskite under high pressure and high temperature is simulated using the molecular dynamics method. It was found that the molecular dynamics simulation is very successful in accurately reproducing the measured molar volumes of MgSiO3 perovskite over a wide range of temperatures and pressures. The simulated equation of state of MgSiO3 perovskite matched experimental data at up to 140GPa at 300 K, as well as the fitting data of others and results from the first-principles simulation based on the local density approximation. The simulated equations of state of MgSiO3 perovskite at higher temperatures and higher pressures also correspond to the other calculations. In addition, the volume compression data of MgSiO3 perovskite is simulated up to 120 GPa at 300, 900, 2000 and 3000 K, respectively.     

两体和三体相互作用下的非线性Landau-Zener隧穿的圈结构研究

在加速光晶格中玻色-爱因斯坦凝聚体（BEC）,当同时考虑两体和三体相互作用时,其能级结构、隧穿率出现了独特的特性.在一维加速光晶格中的BEC,当两体和三体相互作用参数满足一定条件时,非线性两能级体系的能级结构中出现了圈结构,研究得出了圈的宽度随两体和三体相互作用参数变化的关系,并由此分析圈结构的出现及其大小对BEC隧穿率的影响.     

硝酸丙酯键离解能和热解机理的密度泛函理论研究

 采用B3LYP方法、在6-31G*基组水平上,优化了硝酸丙酯单体的平衡几何构型,计算了分子中各键的离解能。结果表明该分子中最弱的键为O—NO₂键,次弱键为C—O键。同时研究了热解机理,探索性的预测了断裂O—NO₂键及C—O键后的产物,并采用从头算法、半经验方法和密度泛函理论分别计算了硝酸丙酯的生成热,由半经验方法中的PM3得到的数值和实验结果符合较好。     

菲涅尔数字全息的脉冲响应

数字全息是用CCD记录全息图并用计算机数值重建全息像的一种全息新方法.在数字全息中,通过对不同记录参数下记录的全息图的数值处理,可以消除零级光和共轭光,从而将数字全息系统看作是一个线性系统.本文依据全息理论和付里叶频谱分析,对菲涅尔数字全息系统的脉冲响应和分辨本领进行了理论分析.结果表明,在矩形等间隔抽样的情形下,菲涅尔数字全息的脉冲响应是由CCD有限大小的孔径衍射斑调制的矩形函数;菲涅尔数字全息的分辨率由CCD的孔径尺寸决定;由于CCD像素具有一定的大小,使得点光源的像发生弥散.     

高温高压下闪锌矿相GaN结构和热力学特性的分子动力学研究

利用分子动力学方法和Buckingham经验势模型对重要半导体材料GaN立方闪锌矿相的晶格常数、相变压力(从闪锌矿到岩盐结构)、热膨胀、等温体模量、定压热容等结构和热力学特性在300—3000K的温度范围和0—65GPa的压力范围内进行了研究.研究表明，闪锌矿相GaN常态下的结构和热力学参数的模拟结果与实验数据及其他理论结果相符.同时在所选作用势模型可靠性检验的基础上，对等温体模量、定压热容诸非谐性参量在高温高压下的热力学行为进行了预测.所得结果在材料科学等领域的研究中具有一定的应用背景和参考价值. 关键词： GaN Buckingham势 分子动力学模拟 高温高压     

含能材料中键离解能的密度泛函理论计算

通过计算一个包括臭氧,硝基甲烷以及1,3,5 -三硝基-1,3,5-三氮杂环已烷(RDX)在内的典型系统的键离解能,对由四种交换/相关函数(BLYP,B3LYP,B3PW91和B3P86)加上不同的基函数组合而成的多种密度泛函方法的准确性进行了比较研究.结果表明:B3P86/6-31G**是计算该系统C-NO2,O-O和N-NO2键离解能的最可靠的方法.