物理概念清楚、理论实验并重、从经典到前沿的一本拉曼光谱学专著

上世纪80年代初,我负责组织我国光电显示材料和器件的研制,因而有机会认识当时正从事液晶物理研究的张树霖同志.90年代初,我培养的一个博士,在他的指导下完成了相当出色的博士后研究,这使我开始对张树霖教授所从事的低维半导体的拉曼光谱学研究工作产生了兴趣,并一直加以关注和了解.     

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

Synthesis of ZnO quantum dots and their agglomeration mechanisms along with emission spectra based on ageing time and temperature

The ZnO quantum dots (QDs) were synthesized with improved chemical solution method. The size of the ZnO QDs is exceedingly uniform with a diameter of approximately 4.8 nm, which are homogeneously dispersed in ethanol. The optical absorption edge shifts from 370 nm of bulk material to 359 nm of QD materials due to the quantum size effect, while the photoluminescence peak shifts from 375 nm to 387 nm with the increase of the density of ZnO QDs. The stability of ZnO QDs was studied with different dispersion degrees at 0 ℃ and at room temperature of 25 ℃. The agglomeration mechanisms and their relationship with the emission spectra were uncovered for the first time. With the ageing of ZnO QDs, the agglomeration is aggravated and the surface defects increase, which leads to the defect emission.     

一种新型平板彩色显示器件的制备和光谱分析

以MEH-PPV(聚[2-甲氧基-5-(2′-乙基己氧基-对苯乙烯)])和Alq₃作为发光层, 成功制备出ITO/SiO₂/MEH-PPV/SiO₂/Al结构和ITO/SiO₂/Alq₃ /SiO₂/Al结构的固态阴极射线器件。通过分析SSCL光谱,认为这些高速电子激发有机材料后形成Frenkel激子。当器件两个电极之间加的电压比较低时,有机薄膜层的场强也比较低,这些激子被解离的概率很小,从而产生的是激子发光的长波发射;当器件两个电极之间加的电压比较高时,有机薄膜层的场强很高, 在有机层形成的激子大部分被解离, 解离后的电子直接跃迁至LUMO(lowest unoccupancied molecular orbit),这些电子弛豫后从LUMO能级到HOMO(highest occupancied molecular orbit )能级直接辐射跃迁, 接着重新复合发光,从而产生短波发射。制作的固态阴极射线器件可以实现全色发光, 提高发光效率和加强蓝光发射。作者可以预期所研制出的这种SSCL器件必将引发平板显示领域一场新的革命性变革。     

Estimation of luminescence lifetime in frequency domain

Absorption is the origin of luminescence. But it must be noticed that the lifetime of luminescence might reversely influence the rate of absorption. In this paper, it is reported that the luminescence intensity of copper and manganese changes with the driving frequency at constant voltage.The variation of luminescent intensity depends only on the lifetime of luminescence but not on the type of quenching or other factors. Generally the rate of absorption is dominantly determined by the material property and the lifetime of luminescence centres, the absorption of shorter lifetime centre will be larger than that of the longer lifetime centre at the same excited condition.     

无机材料中复合发光研究的进展

早期观察到的发光现象既有分立中心的发光,也有离化了的自由载流子参与的复合发光.在发现掺杂的重要性后,绝缘体及半导体内分立中心的发光研究得到了很大的发展。结合灯粉及电子束管的需要,应用了晶体场理论和分子轨道理论,发展了能量输运理论、电声子耦合理论及荧光谱线窄化技术[1]等.相形之下,复合发光的研究就较少,以从禁带至导带跃迁中能量最低的激子而言,起初只是研究它的吸收,从七十年代才开始研究它的发光.但是,复合发光和分立中心的发光相比,既不受杂质浓度及杂质激发态寿命的限制,又有较宽的能量状态,变化范围也较大[2].近年来,它…     

掺杂二氧化钛纳米管对有机电致发光性能的影响

在聚合物电致发光器件中，通过在不同功能层中掺杂二氧化钛纳米管来改善器件的性能.由于二氧化钛纳米管具有p型传导特性，可以显著增大空穴传输层中载流子的迁移率.由于二氧化钛纳米管在发光层中可以增大发光材料分子的刚性，从而减少无辐射跃迁.当把二氧化钛纳米管掺杂到空穴缓冲层中时，由于其与有机分子的强相互作用，一方面降低了空穴的传导性，同时也减少了界面淬灭发光的缺陷态的产生. 关键词： 二氧化钛纳米管 聚合物电致发光 掺杂     

CBP/Alq3有机量子阱结构的光致发光

采用多源有机分子气相沉积系统(OMBD)制备了CBP/Alq₃有机多量子阱结构,利用电化学循环伏安特性和吸收光谱、小角X射线衍射、荧光光谱研究了量子阱的能带、结构和光致发光的特性。电化学循环伏安特性和吸收光谱的测量结果表明,CBP的最低占据分子轨道(LUMO)与最高占据分子轨道(HOMO)的位置分别为-2.74,-6.00eV,Alq₃的LUMO与HOMO的位置分别为-3.10,-5.80eV,所以CBP/Alq₃有机量子阱为Ⅰ型量子阱结构。小角X衍射测量显示,在小角的位置(2θ的范围在0°～3°)观察到了对应于量子阱结构的多级布拉格衍射峰,表明多层量子阱结构是有序的层状结构,界面比较完整,界面质量比较好。荧光光谱的研究结果表明,Ⅰ型量子阱结构可以有效地把能量从垒层传递给阱层,从而增强了阱层材料的发光。阱层的厚度对发光峰的位置影响很大,随阱层厚度减小,阱层材料的发光峰出现蓝移现象。并对引起发光峰蓝移的原因进行了讨论。     

在结晶发光体Zn S-Cu,Co中电子被俘获及复合时有效截面之比的测定

结晶发光体在吸收能量后可以发出燐光。所谓燐光,是指经过以下程序后所发生的光。这个程序又可分成两个基本的阶段。第一阶段内电子在晶栅中运动,第二阶段内电子与离子化了的发光中心復合发光。第一阶段是相当复杂的,电子可以被俘获中心所俘获,可以藉熱振动或其他原因从俘获中心被解放出来,可以又重新被俘获,还可以回到发光中心后又由于热振动而重新被游离出来。如众所知,当发光体被激发时     

BaFCl∶Eu~（2＋）中F色心的浓度和光激励截面与温度和紫外线的辐照波长的关系

本文研究了ＢａＦＣｌ∶ＥＵ（２＋）在不同波长的紫外线辐照和不同的测定温度下的光激励发光性质．通过改变激励方式及激励光的扫描方向，给出了ＢａＦＣｌ∶Ｅｕ（２＋）光激励发光过程中，两种Ｆ色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系．同时我们还研究了在激励读出过程中，对应两种Ｆ色心的光激励发光强度与激励温度的关系，并且给出了相应于Ｆ（Ｃｌ－）心的热激活能．